Nano‐Ferroelectric for High Efficiency Overall Water Splitting under Ultrasonic Vibration von Su, Ran, Hsain, H. Alex, Wu, Ming, Zhang, Dawei, Hu, Xinghao, Wang, Zhipeng, Wang, Xiaojing, Li, Fa‐tang, Chen, Xuemin, Zhu, Lina, Yang, Yong, Yang, Yaodong, Lou, Xiaojie, Pennycook, Stephen J.

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Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films von Hsain, H. Alex, Lee, Younghwan, Parsons, Gregory, Jones, Jacob L.

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Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum von Lee, Younghwan, Alex Hsain, H., Fields, Shelby S., Jaszewski, Samantha T., Horgan, Madison D., Edgington, Patrick G., Ihlefeld, Jon F., Parsons, Gregory N., Jones, Jacob L.

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Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes von Payne, Alexis, Alex Hsain, H., Lee, Younghwan, Strnad, Nicholas A., Jones, Jacob L., Hanrahan, Brendan

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The influence of crystallographic texture on structural and electrical properties in ferroelectric Hf0.5Zr0.5O2 von Lee, Younghwan, Broughton, Rachel A., Hsain, H. Alex, Song, Seung Keun, Edgington, Patrick G., Horgan, Madison D., Dowden, Amy, Bednar, Amanda, Lee, Dong Hyun, Parsons, Gregory N., Park, Min Hyuk, Jones, Jacob L.

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Synergetic modulation of the electronic structure and hydrophilicity of nickel-iron hydroxide for efficient oxygen evolution by UV/ozone treatment von Pan, Ying, Wu, Yanfang, Hsain, H. Alex, Su, Ran, Cazorla, Claudio, Chu, Dewei

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Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface von Hsain, H Alex, Lee, Younghwan, Lancaster, Suzanne, Lomenzo, Patrick D, Xu, Bohan, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N, Jones, Jacob L

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Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions von Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed

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Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2based ferroelectric tunnel junctions von Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed

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Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films von Mittmann, Terence, Szyjka, Thomas, Alex, Hsain, Istrate, Marian Cosmin, Lomenzo, Patrick D., Baumgarten, Lutz, Müller, Martina, Jones, Jacob L., Pintilie, Lucian, Mikolajick, Thomas, Schroeder, Uwe

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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices von Silva, José P. B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe

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Nano‐Ferroelectric for High Efficiency Overall Water Splitting under Ultrasonic Vibration von Su, Ran, Hsain, H. Alex, Wu, Ming, Zhang, Dawei, Hu, Xinghao, Wang, Zhipeng, Wang, Xiaojing, Li, Fa‐tang, Chen, Xuemin, Zhu, Lina, Yang, Yong, Yang, Yaodong, Lou, Xiaojie, Pennycook, Stephen J.

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Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films von Mittmann, Terence, Szyjka, Thomas, Alex, Hsain, Istrate, Marian Cosmin, Lomenzo, Patrick D., Baumgarten, Lutz, Müller, Martina, Jones, Jacob L., Pintilie, Lucian, Mikolajick, Thomas, Schroeder, Uwe

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Rapid Research Letters von Mittmann, Terence, Szyjka, Thomas, Hsain Alex, Istrate, Marian Cosmin, Lomenzo, Patrick D, Baumgarten, Lutz, Müller, Martina, Jones, Jacob L, Pintilie, Lucian, Mikolajick, Thomas, Schroeder, Uwe

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Effect of ferroelectric and interface films on the tunneling electroresistance of the Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions von Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed

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Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates von Hsain, H. Alex, Sharma, Pankaj, Yu, Hyeonggeun, Jones, Jacob L., So, Franky, Seidel, Jan

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Reduced fatigue and leakage of ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors by thin alumina interlayers at the top or bottom interface von Hsain, H Alex, Lee, Younghwan, Lancaster, Suzanne, Lomenzo, Patrick D, Xu, Bohan, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N, Jones, Jacob L

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Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition von Hsain, H. Alex, Lee, Younghwan, Lomenzo, Patrick D., Alcala, Ruben, Xu, Bohan, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

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Development and application of screening-level risk analysis for emerging materials von Horgan, Madison D., Hsain, H. Alex, Jones, Jacob L., Grieger, Khara D.

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