Characterization of 2DEG on WG semiconductors through sub-sampled 4DSTEM von Nicotra, Giuseppe, Sfuncia, Gianfranco, Robinson W, Alex, Nicholls, Daniel, Wells, Jack, Mio M, Antonio, Bongiorno, Corrado, Bottari, Cettina, Adamo, Salvatore, Russo, Alfio, Alessandrino, Santi, Browning D, Nigel, Spinella, Corrado

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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs von Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio

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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs von Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Mario Santi Alessandrino, Iucolano, Ferdinando, Roccaforte, Fabrizio

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Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations von Fiorenza, Patrick, Bongiorno, Corrado, Giannazzo, Filippo, Alessandrino, Santi, Messina, Angelo, Saggio, Mario, Roccaforte, Fabrizio

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C49–C54 phase transition in nanometric titanium disilicide nanograins von Alessandrino, M.S, Grimaldi, M.G, La Via, F

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