Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range von Alaydin, B. Özgür, Gaulke, Marco, Heidrich, Jonas, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization von Gaulke, Marco, Heidrich, Jonas, Özgür Alaydin, B., Golling, Matthias, Barh, Ajanta, Keller, Ursula

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High-power low-noise 2-GHz femtosecond laser oscillator at 2.4 µm von Barh, Ajanta, Alaydin, B Özgür, Heidrich, Jonas, Gaulke, Marco, Golling, Matthias, Phillips, Christopher R, Keller, Ursula

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High average output power from a backside- cooled 2-μm InGaSb VECSEL with full gain characterization von Gaulke, Marco, Heidrich, Jonas, Alaydin, B. Ozgur, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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Characterization of multilayer Al doping in ZnO von Tüzemen, Ebru Şenadım, Muğlu, Günay Merhan, Alaydın, B. Özgür, Altun, Didem, Çetin, Selda Kılıç, Gür, Emre

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