The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope von Zamani-Alavijeh, Mohammad, Morgan, Timothy A., Kuchuk, Andrian V., Salamo, Gregory J.

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Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime von Abu‐Safe, Husam H., Al‐Esseili, Razan, El‐Nasser, Husam, Sarollahi, Mirsaeid, Refaei, Malak, Zamani‐Alavijeh, Mohammad, Naseem, Hameed, Ware, Morgan E.

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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam von Wangila, Emmanuel, Gunder, Calbi, Zamani-Alavijeh, Mohammad, Maia de Oliveira, Fernando, Kryvyi, Serhii, Sheibani, Aida, Mazur, Yuriy I, Yu, Shui-Qing, Salamo, Gregory J

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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire von Wangila, Emmanuel, Gunder, Calbi, Lytvyn, Petro M., Zamani-Alavijeh, Mohammad, Maia de Oliveira, Fernando, Kryvyi, Serhii, Stanchu, Hryhorii, Sheibani, Aida, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory

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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy von Gunder, Calbi, Zamani-Alavijeh, Mohammad, Wangila, Emmanuel, Maia de Oliveira, Fernando, Sheibani, Aida, Kryvyi, Serhii, Attwood, Paul C, Mazur, Yuriy I, Yu, Shui-Qing, Salamo, Gregory J

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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy von Wangila, Emmanuel, Lytvyn, Peter, Stanchu, Hryhorii, Gunder, Calbi, de Oliveira, Fernando Maia, Saha, Samir, Das, Subhashis, Eldose, Nirosh, Li, Chen, Zamani-Alavijeh, Mohammad, Benamara, Mourad, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J.

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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features von Sarollahi, Mirsaeid, Zamani-Alavijeh, Mohammad, Aldawsari, Manal A., Allaparthi, Rohith, Maruf, Md Helal Uddin, Refaei, Malak, Alhelais, Reem, Mazur, Yuriy I., Ware, Morgan E.

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Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics von Olorunsola, Oluwatobi, Stanchu, Hryhorii, Ojo, Solomon, Wangila, Emmanuel, Said, Abdulla, Zamani-Alavijeh, Mohammad, Salamo, Gregory, Yu, Shui-Qing

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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer von Shetty, Satish, Kuchuk, Andrian V., Maia de Oliveira, Fernando, Kryvyi, Serhii, Li, Chen, Minor, Paul, Zamani-Alavijeh, Mohammad, M. Eldose, Nirosh, Das, Subhashis, Baral, Dinesh, Mazur, Yuriy I., Mantooth, H. Alan, Salamo, Gregory J.

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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy von Gunder, Calbi, Mohammad Zamani Alavijeh, Wangila, Emmanuel, Maia de Oliveira, Fernando, Sheibani, Aida, Kryvyi, Serhii, Attwood, Paul C, Mazur, Yuriy I, Shui-Qing Yu, Salamo, Gregory J

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Study of simulations of double graded InGaN solar cell structures von Sarollahi, Mirsaeid, Zamani-Alavijeh, Mohammad, Allaparthi, Rohith, Aldawsari, Manal A., Refaei, Malak, Alhelais, Reem, Maruf, Md Helal Uddin, Mazur, Yuriy I., Ware, Morgan E.

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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers von Stanchu, Hryhorii, Said, Abdulla, Olorunsola, Oluwatobi, Acharya, Sudip, Amoah, Sylvester, Zamani-Alavijeh, Mohammad, de Oliveira, Fernando M., Chhetri, Santosh Karki, Hu, Jin, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory

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Thermal stability study of gallium nitride based magnetic field sensor von Shetty, Satish, Kuchuk, Andrian, Zamani-Alavijeh, Mohammad, Hassan, Ayesha, Eisner, Savannah R., Maia de Oliveira, Fernando, Krone, Alexis, Harris, John, Thompson, Josh P., Eldose, Nirosh M., Mazur, Yuriy I., Huitink, David, Senesky, Debbie G., Alan Mantooth, H., Salamo, Gregory J.

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Band Offsets of the MOCVD-Grown β‑(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction von Morgan, Timothy A., Rudie, Justin, Zamani-Alavijeh, Mohammad, Kuchuk, Andrian V., Orishchin, Nazar, Alema, Fikadu, Osinsky, Andrei, Sleezer, Robert, Salamo, Gregory, Ware, Morgan E.

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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors von Shetty, Satish, Kuchuk, Andrian V., Zamani-Alavijeh, Mohammad, Oliveira, Fernando Maia de, Hassan, Ayesha, Eisner, Savannah R., Eldose, Nirosh M., Baral, Dinesh, Mazur, Yuriy I, Huitink, David, Senesky, Debbie G., Mantooth, H Alan, Salamo, Gregory J.

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The growth of Ge and direct bandgap Ge 1- x Sn x on GaAs (001) by molecular beam epitaxy von Gunder, Calbi, Maia de Oliveira, Fernando, Wangila, Emmanuel, Stanchu, Hryhorii, Zamani-Alavijeh, Mohammad, Ojo, Solomon, Acharya, Sudip, Said, Abdulla, Li, Chen, Mazur, Yuriy I, Yu, Shui-Qing, Salamo, Gregory J

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The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model von Abu-Safe, Husam H., Al-Esseili, Razan, Al-Taani, Hussein, El-Nasser, Husam, Refaei, Malak, Sarollahi, Mirsaeid, Alhelais, Reem, Zamani-Alavijeh, Mohammad, Ware, Morgan E.

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Band Offsets of the MOCVD-Grown β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 (010) Heterojunction von Morgan, Timothy A, Rudie, Justin, Zamani-Alavijeh, Mohammad, Kuchuk, Andrian V, Orishchin, Nazar, Alema, Fikadu, Osinsky, Andrei, Sleezer, Robert, Salamo, Gregory, Ware, Morgan E

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The growth of Ge and direct bandgap Ge1−xSnx on GaAs (001) by molecular beam epitaxy von Gunder, Calbi, Maia de Oliveira, Fernando, Wangila, Emmanuel, Stanchu, Hryhorii, Zamani-Alavijeh, Mohammad, Ojo, Solomon, Acharya, Sudip, Abdulla, Said, Chen, Li, Mazur, Yuriy I, Shui-Qing Yu, Salamo, Gregory J

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The growth of Ge and direct bandgap GeSn on GaAs (001) by molecular beam epitaxy von Gunder, Calbi, Maia de Oliveira, Fernando, Wangila, Emmanuel, Stanchu, Hryhorii, Zamani-Alavijeh, Mohammad, Ojo, Solomon, Acharya, Sudip, Said, Abdulla, Li, Chen, Mazur, Yuriy I, Yu, Shui-Qing, Salamo, Gregory J

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