Nanometre-scale electronics with III–V compound semiconductors von del Alamo, Jesús A.

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors von Jungwoo Joh, del Alamo, J A

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III–V compound semiconductor transistors—from planar to nanowire structures von Riel, Heike, Wernersson, Lars-Erik, Hong, Minghwei, del Alamo, Jesús A.

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Protonic solid-state electrochemical synapse for physical neural networks von Yao, Xiahui, Klyukin, Konstantin, Lu, Wenjie, Onen, Murat, Ryu, Seungchan, Kim, Dongha, Emond, Nicolas, Waluyo, Iradwikanari, Hunt, Adrian, del Alamo, Jesús A., Li, Ju, Yildiz, Bilge

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CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning von Onen, Murat, Emond, Nicolas, Li, Ju, Yildiz, Bilge, del Alamo, Jesús A

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On the Imprint Mechanism of Thin-Film Hf₀.₅Zr₀.₅O₂ Ferroelectrics von Kim, Taekyong, Alamo, Jesus A. del, Antoniadis, Dimitri

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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems von Song, Min-Kyu, Kang, Ji-Hoon, Zhang, Xinyuan, Ji, Wonjae, Ascoli, Alon, Messaris, Ioannis, Demirkol, Ahmet Samil, Dong, Bowei, Aggarwal, Samarth, Wan, Weier, Hong, Seok-Man, Cardwell, Suma George, Boybat, Irem, Seo, Jae-sun, Lee, Jang-Sik, Lanza, Mario, Yeon, Hanwool, Onen, Murat, Li, Ju, Yildiz, Bilge, del Alamo, Jesús A., Kim, Seyoung, Choi, Shinhyun, Milano, Gianluca, Ricciardi, Carlo, Alff, Lambert, Chai, Yang, Wang, Zhongrui, Bhaskaran, Harish, Hersam, Mark C., Strukov, Dmitri, Wong, H.-S. Philip, Valov, Ilia, Gao, Bin, Wu, Huaqiang, Tetzlaff, Ronald, Sebastian, Abu, Lu, Wei, Chua, Leon, Yang, J. Joshua, Kim, Jeehwan

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Nanosecond protonic programmable resistors for analog deep learning von Onen, Murat, Emond, Nicolas, Wang, Baoming, Zhang, Difei, Ross, Frances M., Li, Ju, Yildiz, Bilge, del Alamo, Jesús A.

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs von Guo, Alex, del Alamo, Jesus A.

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The Next Generation Fornax Survey (NGFS). II. The Central Dwarf Galaxy Population von Eigenthaler, Paul, Puzia, Thomas H., Taylor, Matthew A., Ordenes-Briceño, Yasna, Muñoz, Roberto P., Ribbeck, Karen X., Alamo-Martínez, Karla A., Zhang, Hongxin, Ángel, Simón, Capaccioli, Massimo, Côté, Patrick, Ferrarese, Laura, Galaz, Gaspar, Grebel, Eva K., Hempel, Maren, Hilker, Michael, Lançon, Ariane, Mieske, Steffen, Miller, Bryan, Paolillo, Maurizio, Powalka, Mathieu, Richtler, Tom, Roediger, Joel, Rong, Yu, Sánchez-Janssen, Ruben, Spengler, Chelsea

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors von Jungwoo Joh, del Alamo, J.A.

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Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites von Roh, Heejung, Kim, Dong‐Ha, Cho, Yeongsu, Jo, Young‐Moo, Alamo, Jesús A., Kulik, Heather J., Dincă, Mircea, Gumyusenge, Aristide

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Change of Editor-in-Chief of EDL von Alamo, Jesus A. Del

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Changes to the Editorial Board von Alamo, Jesus A. Del

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Smoking and diabetes: dangerous liaisons and confusing relationships von Campagna, D, Alamo, A, Di Pino, A, Russo, C, Calogero, A E, Purrello, F, Polosa, R

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Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs von Xin Zhao, del Alamo, Jesus A.

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Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs von Vardi, Alon, del Alamo, Jesus A.

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Changes to the Editorial Board von Alamo, Jesus A. Del

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Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs von Xin Zhao, Vardi, Alon, del Alamo, Jesus A.

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In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs von Lu, Wenjie, Lee, Younghee, Gertsch, Jonas C, Murdzek, Jessica A, Cavanagh, Andrew S, Kong, Lisa, del Alamo, Jesús A, George, Steven M

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