A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction von Dongre, Suryansh, Saha, Jhuma, Panda, Debiprasad, Das, Debabrata, Reddy, Saranya, Paul, Sritoma, Mondal, Shubham, Alam Gazi, Sanowar, Chakrabarti, Subhananda

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Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers von Sharma, Akant Sagar, Das, Subhasis, Gazi, Sanowar Alam, Dhar, S.

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Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy von Shriram, Saranya Reddy, Kumar, Ravindra, Panda, Debiprasad, Saha, Jhuma, Tongbram, Binita, Mantri, Manas Ranjan, Gazi, Sanowar Alam, Mandal, Arjun, Chakrabarti, Subhananda

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Evaluation of In(Ga)As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage von Gourishetty, Raveesh, Panda, Debiprasad, Dongre, Suryansh, Gazi, Sanowar Alam, Chakrabarti, Subhananda

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Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characte... von Gourishetty, Raveesh, Panda, Debiprasad, Dongre, Suryansh, Saha, Jhuma, Gazi, Sanowar Alam, Chakrabarti, Subhananda

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Growth of dilute quaternary alloy InPNBi and its′ characterization von Das, Subhasis, Sharma, Akant Sagar, Gazi, Sanowar Alam, Dhar, S.

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Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment von Kumar, Ravindra, Saha, Jhuma, Panda, Debiprasad, Kumar, Ravinder, Gazi, Sanowar Alam, Gourishetty, Raveesh, Chakrabarti, Subhananda

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InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer von Kumar, Ravindra, Saha, Jhuma, Tongbram, Binita, Panda, Debiprasad, Gourishetty, Raveesh, Kumar, Ravinder, Gazi, Sanowar Alam, Chakrabarti, Subhananda

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The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure von Shriram, Saranya Reddy, Panda, Debiprasad, Kumar, Ravindra, Saha, Jhuma, Tongbram, Binita, Mantri, Manas Ranjan, Gazi, Sanowar Alam, Mandal, Arjun, Chakrabarti, Subhananda

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Optimization of vertical strain coupling in InAs/GaAs p-i-p quantum dot infrared photodetectors with applied growth strategy von Dongre, Suryansh, Paul, Sritoma, Mondal, Shubham, Panda, Debiprasad, Shriram, Saranya Reddy, Mantri, Manas Ranjan, Gazi, Sanowar Alam, Das, Debabrata, Kumar, Ravinder, Tongbram, Binita, Chakrabarti, Subhananda

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Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation von Mantri, Manas Ranjan, Panda, Debiprasad, Das, Debabrata, Mondal, Shubham, Paul, Sritoma, Gazi, Sanowar Alam, Kumar, Ravinder, Dongre, Suryansh, Pansare, Amol V., Chakrabarti, Subhananda

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In-Situ Tailoring of Vertically Coupled InAs p‑i‑p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing von Dongre, Suryansh, Paul, Sritoma, Mondal, Shubham, Kumar, Ravindra, Panda, Debiprasad, Gazi, Sanowar Alam, Das, Debabrata, Kumar, Ravinder, Shriram, Saranya Reddy, Mantri, Manas Ranjan, Tongbram, Binita, Chakrabarti, Subhananda

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Short-wave infrared (SWIR) photodetection by InAs/GaAs quantum dot heterostructures grown on Ge (100) substrate without Migration Enhanced Epitaxy layer von Kumar, Ravinder, Panda, Debiprasad, Saha, Jhuma, Gazi, Sanowar Alam, Chakrabarti, Subhananda

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