Geometrical quasi-ballistic effects on thermal transport in nanostructured devices von Alajlouni, Sami, Beardo, Albert, Sendra, Lluc, Ziabari, Amirkoushyar, Bafaluy, Javier, Camacho, Juan, Xuan, Yi, Alvarez, F. Xavier, Shakouri, Ali

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 x 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarizati... von Si, Mengwei, Murray, Anna, Lin, Zehao, Andler, Joseph, Li, Junkang, Noh, Jinhyun, Alajlouni, Sami, Niu, Chang, Lyu, Xiao, Zheng, Dongqi, Maize, Kerry, Shakouri, Ali, Datta, Suman, Agrawal, Rakesh, Ye, Peide D.

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A Gate-All-Around In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current von Zhang, Zhuocheng, Lin, Zehao, Liao, Pai-Ying, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.

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Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In 2 O 3 FETs Toward Monolithic 3-D Integration von Liao, Pai-Ying, Zheng, Dongqi, Alajlouni, Sami, Zhang, Zhuocheng, Si, Mengwei, Zhang, Jie, Lin, Jian-Yu, Feygelson, Tatyana I., Tadjer, Marko J., Shakouri, Ali, Ye, Peide D.

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Alleviation of Self-Heating Effect in Top-Gated Ultrathin In 2 O 3 FETs Using a Thermal Adhesion Layer von Liao, Pai-Ying, Khot, Krutarth, Alajlouni, Sami, Snure, Mike, Noh, Jinhyun, Si, Mengwei, Zhang, Zhuocheng, Shakouri, Ali, Ruan, Xiulin, Ye, Peide D.

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Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer von Noh, Jinhyun, Chowdhury, Prabudhya Roy, Segovia, Mauricio, Alajlouni, Sami, Si, Mengwei, Charnas, Adam R., Huang, Shouyuan, Maize, Kerry, Shakouri, Ali, Xu, Xianfan, Ruan, Xiulin, Ye, Peide D.

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Enhancement of Thermal Transfer From β-Ga 2 O 3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer von Noh, Jinhyun, Chowdhury, Prabudhya Roy, Segovia, Mauricio, Alajlouni, Sami, Si, Mengwei, Charnas, Adam R., Huang, Shouyuan, Maize, Kerry, Shakouri, Ali, Xu, Xianfan, Ruan, Xiulin, Ye, Peide D.

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Alleviation of Self-Heating Effect in Top-Gated Ultrathin In } O } FETs Using a Thermal Adhesion Layer von Liao, Pai-Ying, Khot, Krutarth, Alajlouni, Sami, Snure, Mike, Noh, Jinhyun, Si, Mengwei, Zhang, Zhuocheng, Shakouri, Ali, Ruan, Xiulin, Ye, Peide D.

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A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current von Zhang, Zhuocheng, Lin, Zehao, Liao, Pai-Ying, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.

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Geometrical quasi-ballistic effects on thermal transport in nanostructured devices von Alajlouni, Sami, Beardo, Albert, Sendra, Lluc, Ziabari, Amirkoushyar, Bafaluy, Javier, Camacho, Juan, Xuan, Yi, Alvarez, F. Xavier, Shakouri, Ali

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A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current von Zhang, Zhuocheng, Lin, Zehao, Pai-Ying Liao, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Noh, Jinhyun, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D

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(Invited) Raman Thermography of β-Ga 2 ­O 3 Nanomembrane FETs on Diamond von Tadjer, Marko J, Noh, Jinhyun, Culbertson, James C, Alajlouni, Sami, Si, Mengwei, Zhou, Hong, Shakouri, Ali, Ye, Peide D

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