Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties von John, P., Al Khalfioui, M., Deparis, C., Welk, A., Lichtensteiger, C., Bachelet, R., Saint-Girons, G., Rotella, H., Hugues, M., Grundmann, M., Zúñiga-Pérez, J.

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UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range von Brault, J, Khalfioui, M Al, Matta, S, Damilano, B, Leroux, M, Chenot, S, Korytov, M, Nkeck, J E, Vennéguès, P, Duboz, J-Y, Massies, J, Gil, B

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Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN von Miller, J. D., Trodahl, H. J., Al Khalfioui, M., Vézian, S., Ruck, B. J.

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High Temperature Annealing of MBE-grown Mg-doped GaN von Contreras, S, Konczewicz, L, Peyre, H, Juillaguet, S, Khalfioui, M Al, Matta, S, Leroux, M, Damilano, B, Brault, J

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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges von Brault, J., Matta, S., Ngo, T.-H., Al Khalfioui, M., Valvin, P., Leroux, M., Damilano, B., Korytov, M., Brändli, V., Vennéguès, P., Massies, J., Gil, B.

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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials von Konczewicz, L., Juillaguet, S., Litwin-Staszewska, E., Piotrzkowski, R., Peyre, H., Matta, S., Al Khalfioui, M., Leroux, M., Damilano, B., Brault, J., Contreras, S.

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Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes von Montes, M, Hierro, A, Ulloa, J M, Guzmán, A, Damilano, B, Hugues, M, Al Khalfioui, M, Duboz, J-Y, Massies, J

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Improved performance in GaInNAs solar cells by hydrogen passivation von Fukuda, M., Whiteside, V. R., Keay, J. C., Meleco, A., Sellers, I. R., Hossain, K., Golding, T. D., Leroux, M., Al Khalfioui, M.

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The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs von Brown, C. R, Estes, N. J, Whiteside, V. R, Wang, B, Hossain, K, Golding, T. D, Leroux, M, Al Khalfioui, M, Tischler, J. G, Ellis, C. T, Glaser, E. R, Sellers, I. R

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Photoluminescence study of Be-acceptors in GaInNAs epilayers von Tsai, Y., Barman, B., Scrace, T., Fukuda, M., Whiteside, V. R., Sellers, I. R., Leroux, M., Khalfioui, M. Al, Petrou, A.

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Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots von Hugues, M, Damilano, B, Khalfioui, M Al, Duboz, J-Y, Massies, J, Richter, M, Wieck, A D

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE von Matta, Samuel, Brault, Julien, Korytov, Maxim, Phuong Vuong, Thi Quynh, Chaix, Catherine, Al Khalfioui, Mohamed, Vennéguès, Philippe, Massies, Jean, Gil, Bernard

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Micromachined thermal inclinometer based on flash evaporated Bi0.5Sb1.5Te3 (p)/Bi2Se0.3Te2.7(n) thermocouples von Giani, A, Mailly, F, Khalfioui, M Al, Foucaran, A, Boyer, A

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Anemometer based on Seebeck effect von Al khalfioui, M., Michez, A., Giani, A., Boyer, A., Foucaran, A.

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Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor von AL BAYAZ, A, GIANI, A, AL KHALFIOUI, M, FOUCARAN, A, PASCAL-DELANNOY, F, BOYER, A

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Electroluminescence analysis of 1.3-1.5 μm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers von Montes, M., Hierro, A., Ulloa, J. M., Guzmán, A., Khalfioui, M. Al, Hugues, M., Damilano, B., Massies, J.

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AlN interlayer to improve the epitaxial growth of SmN on GaN (0001) von Vézian, S., Damilano, B., Natali, F., Khalfioui, M. Al, Massies, J.

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Ultraviolet light emitting diodes using III-N quantum dots von Brault, Julien, Matta, Samuel, Ngo, Thi-Huong, Rosales, Daniel, Leroux, Mathieu, Damilano, Benjamin, Khalfioui, Mohamed Al, Tendille, Florian, Chenot, Sébastien, De Mierry, Philippe, Massies, Jean, Gil, Bernard

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UVA and UVB light emitting diodes with Al y Ga 1− y N quantum dot active regions covering the 305–335 nm range von Brault, J, Khalfioui, M Al, Matta, S, Damilano, B, Leroux, M, Chenot, S, Korytov, M, Nkeck, J E, Vennéguès, P, Duboz, J–Y, Massies, J, Gil, B

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Enhanced Sm spin projection in Gd x Sm 1 − x N von Miller, J. D., McNulty, J. F., Ruck, B. J., Khalfioui, M. Al, Vézian, S., Suzuki, M., Osawa, H., Kawamura, N., Trodahl, H. J.

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