N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N von Kayede, Emmanuel, Akso, Emre, Romanczyk, Brian, Hatui, Nirupam, Sayed, Islam, Khan, Kamruzzaman, Collins, Henry, Keller, Stacia, Mishra, Umesh K.

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Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs von Li, Weiyi, Romanczyk, Brian, Guidry, Matthew, Akso, Emre, Hatui, Nirupam, Wurm, Christian, Liu, Wenjian, Shrestha, Pawana, Collins, Henry, Clymore, Christopher, Keller, Stacia, Mishra, Umesh K.

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N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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First Demonstration of an N-Polar InAlGaN/GaN HEMT von Hamwey, Robert, Hatui, Nirupam, Akso, Emre, Wu, Feng, Clymore, Christopher, Keller, Stacia, Speck, James S., Mishra, Umesh K.

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Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al[sub.0.24]Ga[sub.0.76]N von Kayede, Emmanuel, Akso, Emre, Romanczyk, Brian, Hatui, Nirupam, Sayed, Islam, Khan, Kamruzzaman, Collins, Henry, Keller, Stacia, Mishra, Umesh K

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N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P out at 94 GHz von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz von Akso, Emre, Collins, Henry, Clymore, Christopher, Li, Weiyi, Guidry, Matthew, Romanczyk, Brian, Wurm, Christian, Liu, Wenjian, Hatui, Nirupam, Hamwey, Robert, Shrestha, Pawana, Keller, Stacia, Mishra, Umesh K.

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N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz von Collins, Henry, Akso, Emre, Hatui, Nirupam, Clymore, Christopher J., Wurm, Christian, Hamwey, Robert, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz von Akso, Emre, Li, Weiyi, Clymore, Christopher, O'Malley, Everett, Guidry, Matthew, Kim, Justin, Romanczyk, Brian, Collins, Henry, Wang, Boyu, Wurm, Christian, Hatui, Nirupam, Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

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Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz von Akso, Emre, Collins, Henry, Khan, Kamruzzaman, Wang, Boyu, Li, Weiyi, Clymore, Christopher, Kayede, Emmanuel, Liu, Wenjian, Chavan, Tanmay, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Romanczyk, Brian, Keller, Stacia, Mishra, Umesh K.

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Surrogate modeling and variability analysis of on‐chip spiral inductors von Akso, Emre, Soysal, İhsan Baturay, Yelten, Mustafa Berke

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