Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor p... von Higashiwaki, Masataka, Konishi, Keita, Sasaki, Kohei, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori, Kuramata, Akito, Yamakoshi, Shigenobu

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Kirste, Ronny, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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On the origin of the 265 nm absorption band in AlN bulk crystals von Collazo, Ramón, Xie, Jinqiao, Gaddy, Benjamin E., Bryan, Zachary, Kirste, Ronny, Hoffmann, Marc, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Irving, Douglas L., Sitar, Zlatko

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Kirste, Ronny, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source von Iso, Kenji, Murakami, Hisashi, Koukitu, Akinori

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Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth von Inatomi, Yuya, Kangawa, Yoshihiro, Ito, Tomonori, Suski, Tadeusz, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

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Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy von Ema, Kentaro, Uei, Rio, Murakami, Hisashi, Koukitu, Akinori

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Recent progress in Ga2O3 power devices von Higashiwaki, Masataka, Sasaki, Kohei, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu

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Dependence of surface morphology at initial growth of CdTe on the II/VI on (2 1 1) Si substrates by vapor phase epitaxy using metallic Cd source von Iso, Kenji, Gokudan, Yuya, Shiraishi, Masumi, Nishikado, Minae, Murakami, Hisashi, Koukitu, Akinori

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Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy von Takekawa, Nao, Hayashida, Naoto, Ohzeki, Daisuke, Yamaguchi, Akira, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

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Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy von Yamaguchi, Akira, Oozeki, Daisuke, Kawamoto, Naoya, Takekawa, Nao, Bulsara, Mayank, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

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Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3 von Iso, Kenji, Matsuda, Karen, Takekawa, Nao, Murakami, Hisashi, Koukitu, Akinori

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Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source von Iso, Kenji, Gokudan, Yuya, Shiraishi, Masumi, Nishikado, Minae, Murakami, Hisashi, Koukitu, Akinori

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Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3 von Iso, Kenji, Oozeki, Daisuke, Ohtaki, Syoma, Murakami, Hisashi, Koukitu, Akinori

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Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy von Kinoshita, Toru, Nagashima, Toru, Obata, Toshiyuki, Takashima, Shinya, Yamamoto, Reo, Togashi, Rie, Kumagai, Yoshinao, Schlesser, Raoul, Collazo, Ramόn, Koukitu, Akinori, Sitar, Zlatko

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Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy von Inatomi, Yuya, Kangawa, Yoshihiro, Kakimoto, Koichi, Koukitu, Akinori

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Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates von Iso, Kenji, Takekawa, Nao, Matsuda, Karen, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, Akinori

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Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy von Hirasaki, Takahide, Eriksson, Martin, Thieu, Quang Tu, Karlsson, Fredrik, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Holtz, Per Olof, Koukitu, Akinori

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Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy von Kusaba, Akira, Kangawa, Yoshihiro, Kempisty, Pawel, Valencia, Hubert, Shiraishi, Kenji, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

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Growth of thick AlN layers by hydride vapor-phase epitaxy von Kumagai, Yoshinao, Yamane, Takayoshi, Koukitu, Akinori

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