Resistive switching in transition metal oxides von Sawa, Akihito

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Ferroelectricity and pseudo-coherent growth in HfO2/SrHfO3 nanolaminates von Yamada, Hiroyuki, Toyosaki, Yoshikiyo, Sawa, Akihito

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Polarized Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase von Shibuya, Keisuke, Sawa, Akihito

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Growth and ferroelectric properties of yttrium-doped hafnium oxide/indium-tin oxide polycrystalline heterostructures with sharp and uniform interfaces von Yamada, Hiroyuki, Toyosaki, Yoshikiyo, Sawa, Akihito

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Epitaxial growth and polarized Raman scattering of niobium dioxide films von Shibuya, Keisuke, Sawa, Akihito

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Modulation of Metal-Insulator Transition in VO2 by Electrolyte Gating-Induced Protonation von Shibuya, Keisuke, Sawa, Akihito

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Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics von Migita, Shinji, Ota, Hiroyuki, Yamada, Hiroyuki, Shibuya, Keisuke, Sawa, Akihito, Toriumi, Akira

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Resistive switching artificially induced in a dielectric/ferroelectric composite diode von Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Sawa, Akihito

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Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition von Shibuya, Keisuke, Sawa, Akihito

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Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer von Shibuya, Keisuke, Ishii, Kiyo, Atsumi, Yuki, Yoshida, Tomoya, Sakakibara, Youichi, Mori, Masahiko, Sawa, Akihito

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Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments von Migita, Shinji, Ota, Hiroyuki, Shibuya, Keisuke, Yamada, Hiroyuki, Sawa, Akihito, Matsukawa, Takashi, Toriumi, Akira

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Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates von Shibuya, Keisuke, Tsutsumi, Jun’ya, Hasegawa, Tatsuo, Sawa, Akihito

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High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates von Miyazaki, Kenichi, Shibuya, Keisuke, Suzuki, Megumi, Wado, Hiroyuki, Sawa, Akihito

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Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions von Yamada, Hiroyuki, Tsurumaki-Fukuchi, Atsushi, Kobayashi, Masaki, Nagai, Takuro, Toyosaki, Yoshikiyo, Kumigashira, Hiroshi, Sawa, Akihito

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Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3 von Liu, Liang, Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Sawa, Akihito

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories von Jiménez, David, Miranda, Enrique, Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Suñé, Jordi, Sawa, Akihito

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Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature von Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Sawa, Akihito

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Silicon waveguide optical modulator driven by metal–insulator transition of vanadium dioxide cladding layer von Shibuya, Keisuke, Atsumi, Yuki, Yoshida, Tomoya, Sakakibara, Youichi, Mori, Masahiko, Sawa, Akihito

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Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites von Xiang, Ping-Hua, Asanuma, Shutaro, Yamada, Hiroyuki, Inoue, Isao H., Sato, Hiroshi, Akoh, Hiroshi, Sawa, Akihito, Ueno, Kazunori, Yuan, Hongtao, Shimotani, Hidekazu, Kawasaki, Masashi, Iwasa, Yoshihiro

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Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition von Miyazaki, Kenichi, Shibuya, Keisuke, Suzuki, Megumi, Sakai, Kenichi, Fujita, Jun-ichi, Sawa, Akihito

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