Investigation of p-n junctions in n-Si obtained by electromigration of Al through a thin SiO 2 film von Iskender-zade, Z.A., Abdullayev, A.G., Jafarova, E.A., Akhundov, M.R.

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Investigation of p-n junctions in n-Si obtained by electromigration of Al through a thin SiO2 film von ISKENDER-ZADE, Z. A, ABDULLAYEV, A. G, JAFAROVA, E. A, AKHUNDOV, M. R

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Investigation of the reactive properties of diffused Si p- n junctions in the region of high injection levels and strong electric fields von Abdullayev, G.B., Jafarova, E.A., Iskender-Zade, Z.A., Chelnokov, V.E., Alikhanova, Sh, Badalov, A.Z., Akhundov, M.R.

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