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METHOD FOR PRODUCING SHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS FOR SUPERLARGE-SCALE ARSENIDE GALLIUM INTEGRATED CIRCUITS OF STORAGE DEVICES von Kravchenko L.N, Zybin S.N, Inkin B.N, Sheljukhin E.Ju, Artamonov M.M, Poltoratskij Eh.A, Rodionov A.V, Gol'dberg E.Ja, Il'ichev Eh.A, Akhin'ko I.A, Lipshits T.L, Emel'janov A.V

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Thermal oxidation of gallium arsenide with transition metal nanolayers on the surface von Sukhochev, A. S., Tomina, E. V., Mittova, I. Ya

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