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Characterization of BF2, Ga and in dopants in Si for halo implantation von Matsunaga, Yusuke, Binti Aid, Siti Rahmah, Matsumoto, Satoru, Borland, John, Tanjyo, Masayasu

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Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Exc... von Binti Aid, Siti Rahmah, Matsumoto, Satoru, Suzuki, Toshiharu, Fuse, Gensyu, Nakazawa, Toshihiro

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Boron Diffusion Behavior during the Formation of Shallow p+/n Junction using the combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non Melt Exc... von Binti Aid, Siti Rahmah, Matsumoto, Satoru, Suzuki, Toshiharu, Fuse, Gensyu, Nakazawa, Toshihiro

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グリーンレーザーアニーリングによる極浅接合形成 von 松本, 智, 布施, 玄秀, 桜木, 進

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