Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability von Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.

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Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface von Gruber, G., Cottom, J., Meszaros, R., Koch, M., Pobegen, G., Aichinger, T., Peters, D., Hadley, P.

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Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling von Cottom, J., Gruber, G., Hadley, P., Koch, M., Pobegen, G., Aichinger, T., Shluger, A.

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Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations von Cottom, J., Gruber, G., Pobegen, G., Aichinger, T., Shluger, A. L.

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n -channel metal-oxide-semiconductor field-effect transis... von Gruber, G., Hadley, P., Koch, M., Aichinger, T.

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A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI von Aichinger, T., Nelhiebel, M., Grasser, T.

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On the temperature dependence of NBTI recovery von Aichinger, T., Nelhiebel, M., Grasser, T.

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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps von Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, María Toledano, Nelhiebel, M.

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Monitoring of parameter stability of SiC MOSFETs in real application tests von Sievers, M., Findenig, B., Glavanovics, M., Aichinger, T., Deutschmann, B.

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Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation von Salmen, P., Feil, M.W., Waschneck, K., Reisinger, H., Rescher, G., Voss, I., Sievers, M., Aichinger, T.

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Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress von Aichinger, T, Puchner, S, Nelhiebel, M, Grasser, T, Hutter, H

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A two-stage model for negative bias temperature instability von Grasser, T., Kaczer, B., Goes, W., Aichinger, T., Hehenberger, P., Nelhiebel, M.

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Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres von Regoutz, A, Pobegen, G, Aichinger, T

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Effects of nitridation on SiC/SiO(2)structures studied by hard X-ray photoelectron spectroscopy von Berens, J, Bichelmaier, S, Fernando, NK, Thakur, PK, Lee, T-L, Mascheck, M, Wiell, T, Eriksson, SK, Matthias Kahk, J, Lischner, J, Mistry, M, Aichinger, T, Pobegen, G, Regoutz, A

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1200V SiC Trench-MOSFET optimized for high reliability and high performance von Peters, D., Aichinger, T., Basler, T., Bergner, W., Kueck, D., Esteve, R.

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Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes von Tuttle, B. R., Aichinger, T., Lenahan, P. M., Pantelides, S. T.

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First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2 von El-Sayed, A.M., Pobegen, Gregor, Shluger, Alexander L., Mistry, Manesh V., Cottom, Jonathon, Aichinger, Thomas, Patel, K.

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Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study von Pobegen, Gregor, Shluger, Alexander L., Cottom, Jonathon, Gruber, Gernot, Aichinger, Thomas

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The 'permanent' component of NBTI: Composition and annealing von Grasser, T, Aichinger, T, Pobegen, G, Reisinger, H, Wagner, P, Franco, J, Nelhiebel, M, Kaczer, B

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Essential oil content and composition in commercially available dill cultivars in comparison to caraway von Bailer, Josef, Aichinger, Thomas, Hackl, Gerald, de Hueber, Karl, Dachler, Michael

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