Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation von Gang Liu, Ahyi, A. C., Yi Xu, Isaacs-Smith, T., Sharma, Y. K., Williams, J. R., Feldman, L. C., Dhar, S.

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Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs von Rozen, J., Ahyi, A. C., Xingguang Zhu, Williams, J. R., Feldman, L. C.

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High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping von Modic, Aaron, Gang Liu, Ahyi, Ayayi C., Yuming Zhou, Pingye Xu, Hamilton, Michael C., Williams, John R., Feldman, Leonard C., Dhar, Sarit

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Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low-voltage operation von Jiang, Jie, Kuroda, Marcelo A., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Mirkhani, Vahid, Park, Minseo, Dhar, Sarit

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Analysis of temperature dependent forward characteristics of Ni/ ( 2 ¯ 01 ) β-Ga2O3 Schottky diodes von Jayawardena, Asanka, Ahyi, Ayayi C, Dhar, Sarit

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The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices von Zhu, Xingguang, Ahyi, Ayayi C., Li, Mingyu, Chen, Zengjun, Rozen, John, Feldman, Leonard C., Williams, John R.

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Dual-Gate MoS2 FET With a Coplanar-Gate Engineering von Jie Jiang, Ahyi, Ayayi C., Dhar, Sarit

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Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) von Khanal, Min P., Uprety, Sunil, Mirkhani, Vahid, Wang, Shiqiang, Yapabandara, Kosala, Hassani, Ehsan, Isaacs-Smith, Tamara, Ahyi, Ayayi C., Bozack, Michael J., Oh, Tae-Sik, Park, Minseo

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Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors von Khanal, Min P., Ozden, Burcu, Kim, Kyunghyuk, Uprety, Sunil, Mirkhani, Vahid, Yapabandara, Kosala, Ahyi, Ayayi C., Park, Minseo

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Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers von Liu, Peizhi, Li, Guoliang, Duscher, Gerd, Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Williams, John R., Dhar, Sarit

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Structure and stoichiometry of (0001) 4H-SiC/oxide interface von Zhu, Xingguang, Lee, Hang Dong, Feng, Tian, Ahyi, Ayayi C., Mastrogiovanni, Daniel, Wan, Alan, Garfunkel, Eric, Williams, John R., Gustafsson, Torgny, Feldman, Leonard C.

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Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics von Jayawardena, Asanka, Ramamurthy, Rahul P., Ahyi, Ayayi C., Morisette, Dallas, Dhar, Sarit

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Thin PSG Process for 4H-SiC MOSFET von Isaacs-Smith, Tamara, Granfukel, Eric, Xu, Yi, Mawby, Philip Andrew, Dhar, Sarit, Jennings, Michael R., Modic, Aaron, Ahyi, Ayayi C., Williams, John, Feldman, Leonard C., Sharma, Yogesh K., Fisher, Craig, Thomas, Stpehen M.

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Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C von Adedeji, Adetayo V., Ahyi, Ayayi C., Williams, John R., Mohney, Suzanne E., Scofield, James D.

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Dual-Gate MoS sub(2) FET With a Coplanar-Gate Engineering von Jiang, Jie, Ahyi, Ayayi C, Dhar, Sarit

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Dual-Gate MoS 2 FET With a Coplanar-Gate Engineering von Jiang, Jie, Ahyi, Ayayi C., Dhar, Sarit

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Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$ β -Ga 2 O 3 Schottky diodes von Jayawardena, Asanka, Ahyi, Ayayi C, Dhar, Sarit

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Measurement of ultrashort laser pulses using single-crystal films of 4-aminobenzophenone von Bhowmik, Achintya K., Tan, Shida, Ahyi, Ayayi C., Dharmadhikari, J.A., Dharmadhikari, A.K., Mathur, D.

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Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs von Williams, John R., Ryu, Sei Hyung, Ahyi, Ayayi Claude, Agarwal, Anant K., Dhar, Sarit

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Chitosan solid electrolyte as electric double layer in multilayer MoS sub(2) transistor for low-voltage operation von Jiang, Jie, Kuroda, Marcelo A, Ahyi, Ayayi C, Isaacs-Smith, Tamara, Mirkhani, Vahid, Park, Minseo, Dhar, Sarit

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