Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs von Rozen, J., Ahyi, A. C., Xingguang Zhu, Williams, J. R., Feldman, L. C.

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Analysis of temperature dependent forward characteristics of Ni/ ( 2 ¯ 01 ) β-Ga2O3 Schottky diodes von Jayawardena, Asanka, Ahyi, Ayayi C, Dhar, Sarit

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The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices von Zhu, Xingguang, Ahyi, Ayayi C., Li, Mingyu, Chen, Zengjun, Rozen, John, Feldman, Leonard C., Williams, John R.

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Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation von Gang Liu, Ahyi, A. C., Yi Xu, Isaacs-Smith, T., Sharma, Y. K., Williams, J. R., Feldman, L. C., Dhar, S.

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High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping von Modic, Aaron, Gang Liu, Ahyi, Ayayi C., Yuming Zhou, Pingye Xu, Hamilton, Michael C., Williams, John R., Feldman, Leonard C., Dhar, Sarit

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Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low-voltage operation von Jiang, Jie, Kuroda, Marcelo A., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Mirkhani, Vahid, Park, Minseo, Dhar, Sarit

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Dual-Gate MoS2 FET With a Coplanar-Gate Engineering von Jie Jiang, Ahyi, Ayayi C., Dhar, Sarit

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Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) von Khanal, Min P., Uprety, Sunil, Mirkhani, Vahid, Wang, Shiqiang, Yapabandara, Kosala, Hassani, Ehsan, Isaacs-Smith, Tamara, Ahyi, Ayayi C., Bozack, Michael J., Oh, Tae-Sik, Park, Minseo

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Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors von Khanal, Min P., Ozden, Burcu, Kim, Kyunghyuk, Uprety, Sunil, Mirkhani, Vahid, Yapabandara, Kosala, Ahyi, Ayayi C., Park, Minseo

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Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing von Ahyi, Ayayi Claude, Dhar, Sarit, Feldman, L.C., Jiao, C., Zheng, Y., Modic, Aaron, Liu, Gang

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Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics von Jayawardena, Asanka, Ramamurthy, Rahul P., Ahyi, Ayayi C., Morisette, Dallas, Dhar, Sarit

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Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers von Liu, Peizhi, Li, Guoliang, Duscher, Gerd, Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Williams, John R., Dhar, Sarit

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Structure and stoichiometry of (0001) 4H-SiC/oxide interface von Zhu, Xingguang, Lee, Hang Dong, Feng, Tian, Ahyi, Ayayi C., Mastrogiovanni, Daniel, Wan, Alan, Garfunkel, Eric, Williams, John R., Gustafsson, Torgny, Feldman, Leonard C.

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The Limits of Post Oxidation Annealing in NO von Rozen, John, Ahyi, Ayayi Claude, Zhu, Xing Guang, Williams, John R., Feldman, Leonard C.

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On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO von Mirkhani, Vahid, Yapabandara, Kosala, Wang, Shiqiang, Khanal, Min Prasad, Uprety, Sunil, Sultan, Muhammad Shehzad, Ozden, Burcu, Ahyi, Ayayi Claude, Hamilton, Michael C., Sk, Mobbassar Hassan, Park, Minseo

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Dual-Gate MoS sub(2) FET With a Coplanar-Gate Engineering von Jiang, Jie, Ahyi, Ayayi C, Dhar, Sarit

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Dual-Gate MoS 2 FET With a Coplanar-Gate Engineering von Jiang, Jie, Ahyi, Ayayi C., Dhar, Sarit

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Thin PSG Process for 4H-SiC MOSFET von Jennings, Michael R., Ahyi, Ayayi C., Williams, John, Dhar, Sarit, Xu, Yi, Thomas, Stpehen M., Modic, Aaron, Fisher, Craig, Sharma, Yogesh K., Mawby, Philip Andrew, Isaacs-Smith, Tamara, Granfukel, Eric, Feldman, Leonard C.

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Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$ β -Ga 2 O 3 Schottky diodes von Jayawardena, Asanka, Ahyi, Ayayi C, Dhar, Sarit

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Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C von Adedeji, Adetayo V., Ahyi, Ayayi C., Williams, John R., Mohney, Suzanne E., Scofield, James D.

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