Atomic state and characterization of nitrogen at the SiC/SiO2 interface von Xu, Y., Zhu, X., Lee, H. D., Xu, C., Shubeita, S. M., Ahyi, A. C., Sharma, Y., Williams, J. R., Lu, W., Ceesay, S., Tuttle, B. R., Wan, A., Pantelides, S. T., Gustafsson, T., Garfunkel, E. L., Feldman, L. C.

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High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer von Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C., Williams, J. R.

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Phosphorous passivation of the SiO2/4H-SiC interface von SHARMA, Y. K, AHYI, A. C, ISSACS-SMITH, T, SHEN, X, PANTELIDES, S. T, ZHU, X, FELDMAN, L. C, ROZEN, J, WILLIAMS, J. R

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Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors von Jayawardhena, I. U., Ramamurthy, R. P., Morisette, D., Ahyi, A. C., Thorpe, R., Kuroda, M. A., Feldman, L. C., Dhar, S.

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Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence von Jiao, C., Ahyi, A. C., Xu, C., Morisette, D., Feldman, L. C., Dhar, S.

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Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen von Wang, Sanwu, Dhar, S, Wang, Shu-Rui, Ahyi, A C, Franceschetti, A, Williams, J R, Feldman, L C, Pantelides, Sokrates T

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Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides von Jiao, C., Ahyi, A. C., Dhar, S., Morisette, D., Myers-Ward, R.

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Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing von Oder, T. N., Sung, T. L., Barlow, M., Williams, J. R., Ahyi, A. C., Isaacs-Smith, T.

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Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface von Basile, A. F., Ahyi, A. C., Feldman, L. C., Williams, J. R., Mooney, P. M.

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Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface von Xu, Y., Xu, C., Liu, G., Lee, H. D., Shubeita, S. M., Jiao, C., Modic, A., Ahyi, A. C., Sharma, Y., Wan, A., Williams, J. R., Gustafsson, T., Dhar, S., Garfunkel, E. L., Feldman, L. C.

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Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces von Modic, A., Sharma, Y.K., Xu, Y., Liu, G., Ahyi, A.C., Williams, J.R., Feldman, L.C., Dhar, S.

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Re-radiation of acoustic waves from the A0 wave on a submerged elastic shell von AHYI, A. C, HUI CAO, RAJU, P. K, ÜBERALL, Herbert

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Waves on fluid-loaded shells and their resonance frequency spectrum von Bao, X.L., Überall, H., Raju, P.K., Ahyi, A.C., Bjørnø, I.K., Bjørnø, L.

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Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors von Marinella, M. J., Schroder, D. K., Isaacs-Smith, T., Ahyi, A. C., Williams, J. R., Chung, G. Y., Wan, J. W., Loboda, M. J.

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The Limits of Post Oxidation Annealing in NO von Rozen, John, Ahyi, Ayayi Claude, Zhu, Xing Guang, Williams, John R., Feldman, Leonard C.

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MOS Characteristics of C-Face 4H-SiC von Chen, Z., Ahyi, A.C., Zhu, X., Li, M., Isaacs-Smith, T., Williams, J.R., Feldman, L.C.

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Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation von Gang Liu, Ahyi, A. C., Yi Xu, Isaacs-Smith, T., Sharma, Y. K., Williams, J. R., Feldman, L. C., Dhar, S.

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Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs von Rozen, J., Ahyi, A. C., Xingguang Zhu, Williams, J. R., Feldman, L. C.

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Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface von Ahyi, Ayayi Claude, Isaacs-Smith, Tamara, Pantelides, Sokrates T., Williams, John R., Dhar, S., Wang, S.R., Feldman, Leonard C.

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4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping von Zheng, Yongju, Isaacs-Smith, T., Ahyi, A. C., Dhar, S.

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