A Study on Practically Unlimited Endurance of STT-MRAM von Kan, Jimmy J., Chando Park, Chi Ching, Jaesoo Ahn, Yuan Xie, Pakala, Mahendra, Kang, Seung H.

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New method for determining flat-band voltage in high mobility semiconductors von Winter, Roy, Ahn, Jaesoo, McIntyre, Paul C., Eizenberg, Moshe

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Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3 von Ahn, Jaesoo, McIntyre, Paul C.

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Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces von Ahn, Jaesoo, Kent, Tyler, Chagarov, Evgueni, Tang, Kechao, Kummel, Andrew C., McIntyre, Paul C.

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Comparison of Bulk-Oxide Trap Models: Lumped Versus Distributed Circuit von Han-Ping Chen, Jaesoo Ahn, McIntyre, Paul C., Taur, Yuan

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A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors von Yuan Taur, Han-Ping Chen, Qian Xie, Jaesoo Ahn, McIntyre, Paul C., Lin, Dennis, Vais, Abhitosh, Veksler, Dmitry

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A Self-Aligned Two-Step Reactive Ion Etching Process for Nanopatterning Magnetic Tunnel Junctions on 300 mm Wafers von Lin Xue, Nistor, Lavinia, Jaesoo Ahn, Germain, Jonathan, Chi Ching, Balseanu, Mihaela, Cong Trinh, Hao Chen, Hassan, Sajjad, Pakala, Mahendra

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Interface-State Modeling of \hbox\hbox -InGaAs MOS From Depletion to Inversion von Chen, Han-Ping, Yuan, Yu, Yu, Bo, Ahn, Jaesoo, McIntyre, Paul C., Asbeck, Peter M., Rodwell, Mark J. W., Taur, Yuan

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A Distributed Bulk-Oxide Trap Model for \hbox \hbox InGaAs MOS Devices von Yu Yuan, Bo Yu, Jaesoo Ahn, McIntyre, P. C., Asbeck, P. M., Rodwell, M. J. W., Taur, Y.

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Subcutaneous oxidation of In{sub 0.53}Ga{sub 0.47}As(100) through ultra-thin atomic layer deposited Al{sub 2}O{sub 3} von Ahn, Jaesoo, McIntyre, Paul C.

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A Distributed Model for Border Traps in \hbox \hbox-\hbox MOS Devices von Yu Yuan, Lingquan Wang, Bo Yu, Byungha Shin, Jaesoo Ahn, McIntyre, P C, Asbeck, Peter M, Rodwell, M J W, Yuan Taur

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Electron Mobility in Surface- and Buried-Channel Flatband \hbox\hbox\hbox MOSFETs With ALD \hbox\hbox Gate Dielectric von Bentley, S J, Holland, M, Xu Li, Paterson, G W, Haiping Zhou, Ignatova, O, Macintyre, D, Thoms, S, Asenov, A, Byungha Shin, Jaesoo Ahn, McIntyre, P C, Thayne, I G

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A Distributed Bulk-Oxide Trap Model for Al2O3 InGaAs MOS Devices von YU YUAN, BO YU, AHN, Jaesoo, MCINTYRE, Paul C, ASBECK, Peter M, RODWELL, Mark J. W, TAUR, Yuan

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Highly Reliable Magnetic Memory-Based Physical Unclonable Functions von Kang, Jaimin, Han, Donghyeon, Lee, Kyungchul, Ko, San, Koh, Daekyu, Park, Chando, Ahn, Jaesoo, Yu, Minrui, Pakala, Mahendra, Noh, Sujung, Lee, Hansaem, Kwon, JoonHyun, Kim, Kab-Jin, Park, Jongsun, Lee, Soogil, Lee, Jisung, Park, Byong-Guk

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Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics von Chen, Han-Ping, Ahn, Jaesoo, McIntyre, Paul C., Taur, Yuan

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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices von Ahn, Jaesoo, Geppert, Irina, Gunji, Marika, Holland, Martin, Thayne, Iain, Eizenberg, Moshe, McIntyre, Paul C.

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Interface-State Modeling of Al2O3―InGaAs MOS From Depletion to Inversion von CHEN, Han-Ping, YU YUAN, BO YU, AHN, Jaesoo, MCINTYRE, Paul C, ASBECK, Peter M, RODWELL, Mark J. W, TAUR, Yuan

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In Situ As2 Decapping and Atomic Layer Deposition of Al2O3 on n-InGaAs(100) von Ahn, Jaesoo, Shin, Byungha, McIntyre, Paul C.

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In Situ As 2 Decapping and Atomic Layer Deposition of Al 2 O 3 on n-InGaAs(100) von Ahn, Jaesoo, Shin, Byungha, McIntyre, Paul C.

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A Distributed Bulk-Oxide Trap Model for [Formula Omitted] InGaAs MOS Devices von Yuan, Yu, Yu, Bo, Ahn, Jaesoo, McIntyre, Paul C, Asbeck, Peter M, Rodwell, Mark J. W, Taur, Yuan

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