Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors von Pandey, Himadri, Aguirre‐Morales, Jorge‐Daniel, Kataria, Satender, Fregonese, Sebastien, Passi, Vikram, Iannazzo, Mario, Zimmer, Thomas, Alarcon, Eduard, Lemme, Max C.

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An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs von Aguirre-Morales, Jorge-Daniel, Fregonese, Sebastien, Mukherjee, Chhandak, Maneux, Cristell, Zimmer, Thomas

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A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications von Aguirre-Morales, Jorge-Daniel, Fregonese, Sebastien, Mukherjee, Chhandak, Wei Wei, Happy, Henri, Maneux, Cristell, Zimmer, Thomas

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Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design von Mukherjee, Chhandak, Aguirre-Morales, Jorge-Daniel, Fregonese, Sebastien, Zimmer, Thomas, Maneux, Cristell

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Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures von Kazemi, Alireza, Vaziri, Sam, Aguirre Morales, Jorge Daniel, Frégonèse, Sébastien, Cavallo, Francesca, Zamiri, Marziyeh, Dawson, Noel, Artyushkova, Kateryna, Jiang, Ying Bing, Brueck, Steven J. R, Krishna, Sanjay

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Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors von Pandey, Himadri, Aguirre Morales, Jorge Daniel, Kataria, Satender, Fregonese, Sebastien, Passi, Vikram, Iannazzo, Mario, Zimmer, Thomas, Alarcon, Eduard, Lemme, Max C

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Retraction of “Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures” von Kazemi, Alireza, Vaziri, Sam, Aguirre Morales, Jorge Daniel, Frégonèse, Sébastien, Cavallo, Francesca, Zamiri, Marziyeh, Dawson, Noel, Artyushkova, Kateryna, Jiang, Ying Bing, Brueck, Steven J. R, Krishna, Sanjay

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Characterization and modeling of graphene-based transistors towards high frequency circuit applications von Aguirre Morales, Jorge Daniel

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