GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes von Oliveira, Alberto V., Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao A., Langer, Robert, Witters, Liesbeth J., Collaert, Nadine, Thean, Aaron, Claeys, Cor

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Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective von Bordallo, Caio C. M., Sivieri, Victor B., Martino, Joao Antonio, Agopian, Paula G. D., Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Voon-Yew Thean, Aaron, Claeys, Cor

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Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures von Silva, Vanessa C. P., Perina, Welder F., Martino, Joao A., Simoen, Eddy, Veloso, Anabela, Agopian, Paula G. D.

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Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source von Neves, Felipe S., Agopian, Paula G. D., Martino, Joao Antonio, Cretu, Bogdan, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Voon-Yew Thean, Aaron, Claeys, Cor

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Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs von Agopian, Paula G. D., Martino, João A., Kobayashi, Daisuke, Simoen, Eddy, Claeys, Cor

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Analog design with Line-TFET device experimental data: from device to circuit level von Gonçalez Filho, Walter, Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine, Martino, Joao A, Agopian, Paula G D

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Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs von Agopian, Paula G. D., Martino, Marcio D. V., Dos Santos, Sara D., Neves, Felipe S., Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Thean, Aaron Voon-Yew, Claeys, Cor

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Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes von de Oliveira, Alberto V., Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao Antonio, Langer, Robert, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron Voon-Yew, Claeys, Cor

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Temperature influence on experimental analog behavior of MISHEMTs von Perina, Welder F., Martino, Joao A., Simoen, Eddy, Peralagu, Uthayasankaran, Collaert, Nadine, Agopian, Paula G.D.

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Experimental study of MISHEMT from 450 K down to 200 K for analog applications von Perina, Welder F., Martino, Joao A., Simoen, Eddy, Peralagu, Uthayasankaran, Collaert, Nadine, Agopian, Paula G.D.

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Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs von de M. Nogueira, Alexandro, G.D. Agopian, Paula, Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine, Martino, Joao A.

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The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1-xAs nTFETs von Bordallo, Caio C. M., Martino, Joao Antonio, Agopian, Paula G. D., Alian, Alireza, Mols, Yves, Rooyackers, Rita, Vandooren, Anne, Verhulst, Anne S., Simoen, Eddy, Claeys, Cor, Collaert, Nadine

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The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of In x Ga 1– x As nTFETs von Bordallo, Caio C. M., Martino, Joao Antonio, Agopian, Paula G. D., Alian, Alireza, Mols, Yves, Rooyackers, Rita, Vandooren, Anne, Verhulst, Anne S., Simoen, Eddy, Claeys, Cor, Collaert, Nadine

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The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of In x Ga1– x As nTFETs von Bordallo, Caio C M, Martino, Joao Antonio, Agopian, Paula G D, Alian, Alireza, Mols, Yves, Rooyackers, Rita, Vandooren, Anne, Verhulst, Anne S, Simoen, Eddy, Claeys, Cor, Collaert, Nadine

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Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices von Coelho, Carlos H.S., Martino, Joao A., Bellodi, Marcello, Simoen, Eddy, Veloso, Anabela, Agopian, Paula G.D.

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(Invited) Generation-Recombination Noise in Advanced CMOS Devices von Simoen, Eddy, Oliveira, Alberto Vinícius de, Boudier, Dimitri, Mitard, Jerome, Witters, Liesbeth, Veloso, Anabela, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Carin, Regis, Cretu, Bogdan, Langer, Robert, Collaert, Nadine, Thean, Aaron, Claeys, Cor

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Low Temperature Effect on Strained and Relaxed Ge pFinFETs STI Last Processes von Oliveira, Alberto Vinícius de, Simoen, Eddy, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Mitard, Jerome, Witters, Liesbeth, Langer, Robert, Collaert, Nadine, Thean, Aaron, Claeys, Cor

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Fin Dimension Influence on Mechanical Stressors in Triple-Gate SOI nMOSFETs von Bühler, Rudolf Theoderich, Simoen, E., Agopian, Paula Ghedini Der, Claeys, C., Martino, J. A.

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Experimental Comparison between pTFET and pFinFET under Analog Operation von Agopian, Paula Ghedini Der, Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Claeys, Cor

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Temperature Influence on Strained nMuGFETs after Proton Radiation von Bordallo, Caio Cesar Mendes, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Simoen, Eddy, Claeys, C.

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