Treffer 1 - 3 von 3 für Suche 'Aghoram, U.', Suchdauer: 0,50s Treffer weiter einschränken
  1. 1
    Strain Engineering to Improve Data Retention Time in Nonvolatile Memory

    Strain Engineering to Improve Data Retention Time in Nonvolatile Memory von Arghavani, R., Derhacobian, N., Banthia, V., Balseanu, M., Ingle, N., M'Saad, H., Venkataraman, S., Yieh, E., Yuan, Z., Xia, L.-Q., Krivokapic, Z., Aghoram, U., MacWilliams, K., Thompson, S.E.


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  2. 2
    Effect of mechanical stress on LDMOSFETs: Dependence on orientation and gate bias

    Effect of mechanical stress on LDMOSFETs: Dependence on orientation and gate bias von Aghoram, U., Liu, J., Chu, M., Koehler, A.D., Thompson, S.E., Sridhar, S., Wise, R., Pendharkar, S., Denison, M.


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  3. 3
    DEEP TRENCH BASED N-TYPE WELL DIODE AND DIODE TRIGGERED PROTECTION DEVICE

    DEEP TRENCH BASED N-TYPE WELL DIODE AND DIODE TRIGGERED PROTECTION DEVICE von AGHORAM, Umamaheswari, SALMAN, Akram, HU, Binghua, SADOVNIKOV, Alexei

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