Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes von Auer, U., Prost, W., Agethen, M., Tegude, F.-J., Duschl, R., Eberl, K.

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InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources von Velling, P., Agethen, M., Prost, W., Tegude, F.J.

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Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET von Reuter, R., Agethen, M., Auer, U., van Waasen, S., Peters, D., Brockerhoff, W., Tegude, F.-J.

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X-ray characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources von Velling, P., Keiper, D., Brennemann, A., Agethen, M., Janssen, G., Bertenburg, R.M.

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MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications von Keiper, D., Velling, P., Brennemann, A., Agethen, M., van den Berg, C., Bertenburg, R.M., Schineller, B., Heuken, M.

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InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport von Velling, P., Janßen, G., Agethen, M., Prost, W., Tegude, F.J.

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A novel 3-D integrated HFET/RTD frequency multiplier von Auer, U., Prost, W., Janssen, G., Agethen, M., Reuter, R., Tegude, F.J.

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Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N 2 A... von Keiper, Dietmar, Velling, Peter, Prost, Werner, Agethen, Michael, Tegude, Franz-Josef, Landgren, Gunnar

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Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors von Schlothmann, B., Bertenburg, R. M., Agethen, M., Velling, P., Brockerhoff, W., Tegude, F.-J.

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Cryogenic temperature dependence and modelling of RF-noise parameters of carbon doped InP/InGaAs HBT von Agethen, M., Schuller, S., Velling, P., Brockerhoff, W., Tegude, F.-J.

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Consistent small-signal and RF-noise parameter modelling of carbon doped InP/InGaAs HBT von Agethen, M., Schuller, S., Velling, P., Brockerhoff, W., Tegude, F.-J.

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An 11-stage ring oscillator with nonlinear negative feedback for high speed digital applications von Brennemann, A., Bushehri, E., Agethen, M., Bertenburg, R.M., Brockhoff, W., Staroselsky, V., Bratov, V., Schlichter, T., Tegude, F.-J.

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Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET von Reuter, R., Agethen, M., Auer, U., van Waasen, S., Peters, D., Brockerhoff, W., Tegude, F.J.

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A novel 3-D integrated RTD-HFET frequency multiplier von Auer, U., Janssen, G., Agethen, M., Reuter, R., Prost, W., Tegude, F.J.

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METALORGANIC VAPOUR PHASE EPITAXY GROWTH OF InP-BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH CARBON DOPED InGaAs BASE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE IN N2 AM... von Keiper, D, Velling, P, Prost, W, Agethen, M, Tegude, F-J, Landgren, G

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InGaAs PIN detectors for frequencies above 100 GHz von Agethen, M., Keiper, D., Janssen, G., Brennemann, A., Velling, P., van den Berg, C., Bertenburg, R.M.

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Digital Circuit Design Based on the Resonant-Tunneling-Hetero-Junction-Bipolar-Transistor von Glosekotter, P., Pacha, C., Goser, K. F., Wirth, G. I., Prost, W., Auer, U., Agethen, M., Velling, P., Tegude, F. J.

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Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor von Glosekotter, P., Pacha, C., Goser, K.F., Wirth, G.I., Prost, W., Auer, U., Agethen, M., Velling, P., Tegude, F.J.

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Quantitative X-ray analysis of high performance InP/(InGa)As:C HBT for rapid non-destructive material qualification von Velling, P., Keiper, D., Brennemann, A., Agethen, M., Janssen, G., Bushehri, E., Bertenburg, R.M.

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On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuits von Velling, P., Janssen, G., Agethen, M., Prost, W., Auer, U., Reuter, R., Tegude, F.J.

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