Strain-related phenomena in GaN thin films von Kisielowski, C, Krüger, J, Ruvimov, S, Suski, T, Ager, 3rd, JW, Jones, E, Liliental-Weber, Z, Rubin, M, Weber, ER, Bremser, MD, Davis, RF

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Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries von Walukiewicz, W, Shan, W, Yu, KM, Ager, 3rd, JW, Haller, EE, Miotkowski, I, I, Seong, MJ, Alawadhi, H, Ramdas, AK

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Unusual properties of the fundamental band gap of InN von Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Saito, Yoshiki, Nanishi, Yasushi

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Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system von Wu, J., Walukiewicz, W., Yu, K. M., Shan, W., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Metzger, W. K., Kurtz, Sarah

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Structure and electronic properties of InN and In-rich group III-nitride alloys von Walukiewicz, W, Ager, J W, Yu, K M, Liliental-Weber, Z, Wu, J, Li, S X, Jones, R E, Denlinger, J D

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Small band gap bowing in In1−xGaxN alloys von Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J.

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Nature of room-temperature photoluminescence in ZnO von Shan, W., Walukiewicz, W., Ager, J. W., Yu, K. M., Yuan, H. B., Xin, H. P., Cantwell, G., Song, J. J.

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Temperature dependence of the fundamental band gap of InN von Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Li, S. X., Haller, E. E., Lu, Hai, Schaff, William J.

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Evidence for p-type doping of InN von Jones, R E, Yu, K M, Li, S X, Walukiewicz, W, Ager, J W, Haller, E E, Lu, H, Schaff, W J

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Band Anticrossing in GaInNAs Alloys von Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, S. R.

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Raman spectroscopy and time-resolved photoluminescence of BN and BxCyNz nanotubes von WU, J, HAN, Wei-Qiang, WALUKIEWICZ, W, AGER, J. W, SHAN, W, HALLER, E. E, ZETTL, A

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Fermi-level stabilization energy in group III nitrides von Li, S.X., Jones, R.E., Haller, E.E., Department of Materials Science and Engineering, University of California, Berkeley, California 94720, Yu, K.M., Wu, J., Walukiewicz, W., Ager, J.W. III, Shan, W., Lu Hai, Schaff, William J.

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Optical properties and electronic structure of InN and In-rich group III-nitride alloys von Walukiewicz, W, Li, S.X, Wu, J, Yu, K.M, Ager, J.W, Haller, E.E, Lu, Hai, Schaff, William J

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Multiband GaNAsP quaternary alloys von Yu, K. M., Walukiewicz, W., Ager, J. W., Bour, D., Farshchi, R., Dubon, O. D., Li, S. X., Sharp, I. D., Haller, E. E.

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Synthetic Insertion of Gold Nanoparticles into Mesoporous Silica von Kónya, Zoltán, Puntes, Victor F, Kiricsi, Imre, Zhu, Ji, Ager, Joel W, Ko, Moon Kyu, Frei, Heinz, Alivisatos, Paul, Somorjai, Gabor A

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Deep-ultraviolet Raman spectroscopy study of the effect of aging on human cortical bone von Ager, J. W, Nalla, R. K, Breeden, K. L, Ritchie, R. O

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Encapsulation of Metal (Au, Ag, Pt) Nanoparticles into the Mesoporous SBA-15 Structure von Zhu, Ji, Kónya, Zoltan, Puntes, Victor F., Kiricsi, Imre, Miao, C. X., Ager, Joel W., Alivisatos, A. Paul, Somorjai, Gabor A.

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Effects of polar solvents on the fracture resistance of dentin: role of water hydration von Nalla, R.K., Balooch, M., Ager, J.W., Kruzic, J.J., Kinney, J.H., Ritchie, R.O.

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Structure Sensitivity of Vibrational Spectra of Mesoporous Silica SBA-15 and Pt/SBA-15 von Borodko, Yuri, Ager, Joel W, Marti, G. Edward, Song, H, Niesz, Krisztian, Somorjai, Gabor A

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Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition von Romano, L. T., Van de Walle, C. G., Ager, J. W., Götz, W., Kern, R. S.

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