Unusual properties of the fundamental band gap of InN von Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Saito, Yoshiki, Nanishi, Yasushi

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Polycrystalline CVD Diamond Films with High Electrical Mobility von Plano, M. A., Landstrass, M. I., Pan, L. S., Han, S., Kania, D. R., McWilliams, S., Ager, J. W.

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Band Anticrossing in GaInNAs Alloys von Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, S. R.

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Fermi-level stabilization energy in group III nitrides von Li, S.X., Jones, R.E., Haller, E.E., Department of Materials Science and Engineering, University of California, Berkeley, California 94720, Yu, K.M., Wu, J., Walukiewicz, W., Ager, J.W. III, Shan, W., Lu Hai, Schaff, William J.

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Microstructure and electron emission properties of films prepared from single-wall and multi-wall nanotubes containing powders von MONTEIRO, O. R, MAMMANA, V. P, SALVADORI, M. C, AGER, J. W, DIMITRIJEVIC, S

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Strain-related phenomena in GaN thin films von Kisielowski, C, Krüger, J, Ruvimov, S, Suski, T, Ager, 3rd, JW, Jones, E, Liliental-Weber, Z, Rubin, M, Weber, ER, Bremser, MD, Davis, RF

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Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries von Walukiewicz, W, Shan, W, Yu, KM, Ager, 3rd, JW, Haller, EE, Miotkowski, I, I, Seong, MJ, Alawadhi, H, Ramdas, AK

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Effect of nitrogen on the band structure of GaInNAs alloys von Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, Sarah R.

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Electrical Transport Properties of Undoped CVD Diamond Films von Pan, L. S., Kania, D. R., Han, S., Ager, J. W., Landstrass, M., Landan, O. L., Pianetta, P.

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Effect of Si doping on the strain and defect structure of GaN thin films von Romano, L.T, Van de Walle, C.G, Krusor, B.S, Lau, R, Ho, J, Schmidt, T, Ager III, J.W, Götz, W, Kern, R.S

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Photoluminescence and Raman spectroscopy in hydrogenated carbon films von Marchon, B., Jing Gui, Grannen, K., Rauch, G.C., Ager, J.W., Silva, S.R.P., Robertson, J.

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Current status of research and development of III–N–V semiconductor alloys von III, J W Ager, Walukiewicz, W

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Modeling pulsed-laser melting of embedded semiconductor nanoparticles von Sawyer, C. A., Guzman, J., Boswell-Koller, C. N., Sherburne, M. P., Mastandrea, J. P., Bustillo, K. C., Ager, J. W., Haller, E. E., Chrzan, D. C.

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Structure Map for Embedded Binary Alloy Nanocrystals von Yuan, C.W., Shin, S.J., Liao, C.Y., Guzman, J., Stone, P.R., Watanabe, M., Ager III, J.W., Haller, E.E., Chrzan, D.C.

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Band Anticrossing in III-N-V Alloys von Shan, W., Walukiewicz, W., Yu, K.M., Ager III, J.W., Haller, E.E., Geisz, J.F., Friedman, D.J., Olson, J.M., Kurtz, S.R., Xin, H.P., Tu, C.W.

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Theory of Nanocluster Size Distributions from Ion Beam Synthesis von Yuan, C.W., Yi, D.O., Sharp, I.D., Shin, S.J., Liao, C.Y., Guzman, J., Ager III, J.W., Haller, E.E., Chrzan, D.C.

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Kinetics of visible light photo-oxidation of Ge nanocrystals:Theory and in situ measurement von Sharp, I.D., Xu, Q., Yuan, C.W., Beeman, J.W., Ager III, J.W., Chrzan, D.C., Haller, E.E.

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Hardness, elastic modulus, and structure of very hard carbon films produced by cathodic-arc deposition with substrate pulse biasing von Pharr, George M., Callahan, Daniel L., McAdams, Shaun D., Tsui, Ting Y., Anders, Simone, Anders, André, Ager, Joel W., Brown, Ian G., Bhatia, C. Singh, Silva, S. R. P., Robertson, John

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Light emission during fracture of a Zr–Ti–Ni–Cu–Be bulk metallic glass von Gilbert, C. J., Ager, J. W., Schroeder, V., Ritchie, R. O., Lloyd, J. P., Graham, J. R.

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Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation von Shan, W., Yu, K. M., Walukiewicz, W., Ager, J. W., Haller, E. E., Ridgway, M. C.

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