Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR von Stesmans, A., Schoenaers, B., Afanas’ev, V. V.

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Re-distribution of oxygen at the interface between γ-Al2O3 and TiN von Filatova, E. O., Konashuk, A. S., Sakhonenkov, S. S., Sokolov, A. A., Afanas’ev, V. V.

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Intrinsic point defects in buckled and puckered arsenene: a first-principles study von Iordanidou, K, Kioseoglou, J, Afanas'ev, V. V, Stesmans, A, Houssa, M

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Electronic properties of hydrogenated silicene and germanene von Houssa, M., Scalise, E., Sankaran, K., Pourtois, G., Afanas'ev, V. V., Stesmans, A.

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Control of TiN oxidation upon atomic layer deposition of oxides von Filatova, E O, Sakhonenkov, S S, Konashuk, A S, Afanas'ev, V V

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Defect profiling in FEFET Si:HfO2 layers von O'Sullivan, B. J., Putcha, V., Izmailov, R., Afanas'ev, V., Simoen, E., Jung, T., Higashi, Y., Degraeve, R., Truijen, B., Kaczer, B., Ronchi, N., McMitchell, S., Banerjee, K., Clima, S., Breuil, L., Van den Bosch, G., Linten, D., Van Houdt, J.

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Intrinsic electron traps in atomic-layer deposited HfO2 insulators von Cerbu, F., Madia, O., Andreev, D. V., Fadida, S., Eizenberg, M., Breuil, L., Lisoni, J. G., Kittl, J. A., Strand, J., Shluger, A. L., Afanas'ev, V. V., Houssa, M., Stesmans, A.

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An electric field tunable energy band gap at silicene/(0001) ZnS interfaces von Houssa, M, van den Broek, B, Scalise, E, Pourtois, G, Afanas'ev, V. V, Stesmans, A

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The origin of white luminescence from silicon oxycarbide thin films von Nikas, V., Gallis, S., Huang, M., Kaloyeros, A. E., Nguyen, A. P. D., Stesmans, A., Afanas'ev, V. V.

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Impact of point defects on the electronic and transport properties of silicene nanoribbons von Iordanidou, K, Houssa, M, van den Broek, B, Pourtois, G, Afanas'ev, V V, Stesmans, A

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Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys. 112 , 064115 (2012)] von Afanas'ev, V. V.

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Band alignment at interfaces of two-dimensional materials: internal photoemission analysis von Afanas'ev, Valery V, Delie, Gilles, Houssa, Michel, Shlyakhov, Ilya, Stesmans, Andre, Trepalin, Vadim

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Tracking Problem under Bounded Disturbances. Algebraic Synthesis Method von Afanas’ev, V. N.

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Defect-induced bandgap narrowing in low-k dielectrics von Guo, X., Zheng, H., King, S. W., Afanas'ev, V. V., Baklanov, M. R., de Marneffe, J.-F., Nishi, Y., Shohet, J. L.

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Characterization of a n+3C/n−4H SiC heterojunction diode von Minamisawa, R. A., Mihaila, A., Farkas, I., Teodorescu, V. S., Afanas'ev, V. V., Hsu, C.-W., Janzén, E., Rahimo, M.

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ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity von Stesmans, A., Iacovo, S., Afanas'ev, V. V.

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Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization von Broek, B van den, Houssa, M, Scalise, E, Pourtois, G, Afanas'ev, V V, Stesmans, A

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First-principles study of strained 2D MoS2 von Scalise, E., Houssa, M., Pourtois, G., Afanas′ev, V.V., Stesmans, A.

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Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study von Valeri V. Afanas'ev

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Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators from Internal Photoemission von Shlyakhov, Ilya, Chai, Jianwei, Yang, Ming, Wang, Shijie, Afanas'ev, V. V., Houssa, Michel, Stesmans, Andre

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