Band alignment at interfaces of two-dimensional materials: internal photoemission analysis von Afanas'ev, Valery V, Delie, Gilles, Houssa, Michel, Shlyakhov, Ilya, Stesmans, Andre, Trepalin, Vadim

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The Nitrogen Acceptor in 2H‐Polytype Synthetic MoS2: Frequency and Temperature Dependent ESR Analysis von Schoenaers, Ben, Stesmans, Andre, Afanas'ev, Valery V.

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Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide von El-Sayed, Al-Moatasem, Watkins, Matthew B, Grasser, Tibor, Afanas'ev, Valery V, Shluger, Alexander L

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Theoretical models of hydrogen-induced defects in amorphous silicon dioxide von El-Sayed, Al-Moatasem, Wimmer, Yannick, Goes, Wolfgang, Grasser, Tibor, Afanas'ev, Valery V., Shluger, Alexander L.

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Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO2 von Kolomiiets, Nadiia M., Afanas'ev, Valery V., Madia, Oreste, Cott, Daire J., Collaert, Nadine, Thean, Aaron, Stesmans, Andre

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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 von Scalise, Emilio, Houssa, Michel, Pourtois, Geoffrey, Afanas’ev, Valery, Stesmans, André

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Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance von Schoenaers, Ben, Stesmans, Andre, Afanas’ev, Valery V.

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Nitrogen acceptor in 2H-polytyp synthetic MoS2 assessed by multifrequency electron spin resonance von Schoenaers, Ben, Stesmans, Andre, Afanas'ev, Valery V

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Band alignment at interfaces of two-dimensional materials: internal photoemission analysis von Afanas'ev, Valery V, Delie, Gilles, Houssa, Michel, Shlyakhov, Ilya, Stesmans, Andre, Trepalin, Vadim

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Deep electron and hole polarons and bipolarons in amorphous oxide von Kaviani, Moloud, Strand, Jack, Afanas'ev, Valery V., Shluger, Alexander L.

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The Nitrogen Acceptor in 2H‐Polytype Synthetic MoS 2 : Frequency and Temperature Dependent ESR Analysis von Schoenaers, Ben, Stesmans, Andre, Afanas'ev, Valery V.

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(Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors von Afanas'ev, Valery V., Chiappe, Daniele, Leonhardt, Alessandra, Houssa, Michel, Huyghebaert, Cedric, Radu, Iuliana, Stesmans, Andre

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(Invited) Stoner Ferromagnetism in Two-Dimensional Materials von Houssa, Michel, Meng, Ruishen, Iordanidou, Konstantina, Pourtois, Geoffrey, Afanas'ev, Valery V., Stesmans, Andre

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Hole-Doping Induced Ferromagnetism in Monolayer SnO: A First-Principles Study von Houssa, Michel, Iordanidou, Konstantina, Pourtois, Geoffrey, Afanas'ev, Valery V, Stesmans, Andre

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Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors von Pensl, Gerhard, Beljakowa, Svetlana, Frank, Thomas, Gao, Kunyuan, Speck, Florian, Seyller, Thomas, Ley, Lothar, Ciobanu, Florin, Afanas'ev, Valery, Stesmans, Andre, Kimoto, Tsunenobu, Schöner, Adolf

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Hydrogen induced dipole at the Pt/oxide interface in MOS devices von Kolomiiets, Nadiia, Afanas'ev, Valery V, Opsomer, Karl, Houssa, Michel, Stesmans, Andre

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Nature of intrinsic and extrinsic electron trapping in SiO 2 von El-Sayed, Al-Moatasem, Watkins, Matthew B., Afanas'ev, Valery V., Shluger, Alexander L.

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Effect of La doping on interface barrier between Si‐passivated Ge and insulating HfO 2 von Kolomiiets, Nadiia M., Afanas'ev, Valery V., Madia, Oreste, Cott, Daire J., Collaert, Nadine, Thean, Aaron, Stesmans, Andre

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Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO sub(2) von Kolomiiets, Nadiia M, Afanas'ev, Valery V, Madia, Oreste, Cott, Daire J, Collaert, Nadine, Thean, Aaron, Stesmans, Andre

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(Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures von Stesmans, Andre, Nguyen, Sang, Afanas'ev, Valery V

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