Vibrational properties of epitaxial silicene layers on (111) Ag von Scalise, E., Cinquanta, E., Houssa, M., van den Broek, B., Chiappe, D., Grazianetti, C., Pourtois, G., Ealet, B., Molle, A., Fanciulli, M., Afanas’ev, V.V., Stesmans, A.

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Theoretical aspects of graphene-like group IV semiconductors von Houssa, M., van den Broek, B., Scalise, E., Ealet, B., Pourtois, G., Chiappe, D., Cinquanta, E., Grazianetti, C., Fanciulli, M., Molle, A., Afanas’ev, V.V., Stesmans, A.

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Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR von Stesmans, A, Schoenaers, B, Afanas'ev, V.V

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Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy? von Stesmans, A., Afanas'ev, V.V.

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Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4 von Izmailov, R.A, O'Sullivan, B.J, Popovici, M.I, Afanas'ev, V.V

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Shallow electron traps in high-k insulating oxides von Izmailov, R.A, O'Sullivan, B.J, Popovici, M, Kittl, J.A, Afanas'ev, V.V

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Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures von Delie, G, Shlyakhov, I, Iakoubovskii, K, Achra, S, Afanas'ev, V.V

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Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers von Izmailov, R.A, O'Sullivan, B.J, Popovici, M, Afanas'ev, V.V

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Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4 von Izmailov, R.A., O'Sullivan, B.J., Popovici, M.I., Afanas'ev, V.V.

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Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface von Tummala, P.P., Delie, G., Cataldo, A., Ghomi, S., Martella, C., Ferrini, G., Molle, A., Lamperti, A., Afanas'ev, V.V.

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Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures von Delie, G., Shlyakhov, I., Iakoubovskii, K., Achra, S., Afanas'ev, V.V.

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High- k dielectrics for future generation memory devices (Invited Paper) von Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.

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Control of TiN oxidation upon atomic layer deposition of oxides von Filatova, E.O, Sakhonenkov, S.S, Konashuk, A.S, Afanas'ev, V.V

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Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface von Tummala, P.P, Delie, G, Cataldo, A, Ghomi, S, Martella, C, Ferrini, G, Molle, A, Lamperti, A, Afanas'ev, V.V

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Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers von Izmailov, R.A., O'Sullivan, B.J., Popovici, M., Afanas'ev, V.V.

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Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films von Konashuk, A.S, Filatova, E.O, Sokolov, A.A, Afanas'ev, V.V, Houssa, M, Stesmans, A

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Contact resistance at graphene/MoS2 lateral heterostructures von Houssa, M, Iordanidou, K, Dabral, A, Lu, A, Meng, R, Pourtois, G, Afanas'ev, V.V, Stesmans, A

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Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films von Konashuk, A.S., Filatova, E.O., Sokolov, A.A., Afanas'ev, V.V., Houssa, M., Stesmans, A.

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Shallow electron traps in high-k insulating oxides von Izmailov, R.A., O'Sullivan, B.J., Popovici, M., Kittl, J.A., Afanas'ev, V.V.

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Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interface von Afanas'ev, V.V, Chiappe, D, Perucchini, M, Houssa, M, Huyghebaert, C, Radu, I, Stesmans, A

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