Multi-walled carbon nanotubes/PMMA composites for THz applications von Macutkevic, J., Seliuta, D., Valusis, G., Adomavicius, R., Krotkus, A., Kuzhir, P., Paddubskaya, A., Maksimenko, S., Kuznetsov, V., Mazov, I., Simonova, I.

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Terahertz probing of onion-like carbon-PMMA composite films von Macutkevic, J., Adomavicius, R., Krotkus, A., Seliuta, D., Valusis, G., Maksimenko, S., Kuzhir, P., Batrakov, K., Kuznetsov, V., Moseenkov, S., Shenderova, O., Okotrub, A.V., Langlet, R., Lambin, Ph

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Pulsed THz emission from wurtzite phase catalyst-free InAs nanowires von Adomavičius, R, Nevinskas, I, Treu, J, Xu, X, Koblmüller, G, Krotkus, A

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Non‐stoichiometric GaAs – prospective material for compact THz emitters von Beleckaitė, I., Adomavičius, R., Butkutė, R., Pačebutas, V., Molis, G., Bukauskas, V., Selskis, A., Krotkus, A.

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GaBiAs: A material for optoelectronic terahertz devices von Bertulis, K., Krotkus, A., Aleksejenko, G., Pačebutas, V., Adomavičius, R., Molis, G., Marcinkevičius, S.

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Enhanced THz emission efficiency of composition-tunable InGaAs nanowire arrays von Beleckaitė, I., Treu, J., Morkötter, S., Döblinger, M., Xu, X., Adomavičius, R., Finley, J. J., Koblmüller, G., Krotkus, A.

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Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors von Malevich, Y. V., Adomavičius, R., Krotkus, A., Malevich, V. L.

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Spectral dependencies of terahertz emission from InAs and InSb von Adomavičius, R., Molis, G., Krotkus, A., Sirutkaitis, V.

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Thermal annealing effect on photoexcited carrier dynamics in GaBixAs1−x von Čechavičius, B, Adomavičius, R, Koroliov, A, Krotkus, A

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Terahertz emission from cubic semiconductor induced by a transient anisotropic photocurrent von Malevich, V. L., Ziaziulia, P. A., Adomavičius, R., Krotkus, A., Malevich, Y. V.

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Giant enhancement of terahertz emission from nanoporous GaP von Atrashchenko, A., Arlauskas, A., Adomavičius, R., Korotchenkov, A., Ulin, V. P., Belov, P., Krotkus, A., Evtikhiev, V. P.

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Soft mode in PMN-PSN ceramics von Macutkevic, J., Grigalaitis, R., Adomavicius, R., Krotkus, A., Banys, J., Valusis, G., Bormanis, K., Sternberg, A.

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Spectral dependence of anisotropic picosecond photoconductivity in cubic semiconductors von Malevich, Y. V., Adomavičius, R., Krotkus, A., Pačebutas, V., Malevich, V. L.

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Properties of truly bulk GaN monocrystals grown by ammonothermal method von Dwiliński, Robert, Doradziński, Roman, Garczyński, Jerzy, Sierzputowski, Leszek, Kucharski, Robert, Rudziński, Mariusz, Zając, Marcin, Kudrawiec, Robert

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Terahertz time-domain spectroscopy system based on femtosecond Yb:KGW laser von MOLIS, G, ADOMAVICIUS, R, KROTKUS, A, BERTULIS, K, GINIUNAS, L, POCIUS, J, DANIELIUS, R

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Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters von Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

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Distribution of relaxation times of relaxors: comparison with dipolar glasses von Banys, Juras, Grigalaitis, Robertas, Mikonis, Andrejus, Macutkevic, Jan, Keburis, Povilas

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Manganese as a fast charge carrier trapping center in InP von Korona, K.P., Wysmolek, A., Kamińska, M., Twardowski, A., Piersa, M., Palczewska, M., Strzelecka, G., Hruban, A., Kuhl, J., Adomavicius, R., Krotkus, A.

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Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy von Shafi, M., Mari, R.H., Henini, M., Taylor, D., Hopkinson, M.

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Structural perfection of InGaN layers and its relation to photoluminescence von Liliental-Weber, Z., Yu, K. M., Hawkridge, M., Bedair, S., Berman, A.E., Emara, A., Khanal, D. R., Wu, J., Domagala, J., Bak-Misiuk, J.

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