Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content von Vasileiadis, I. G., Lymperakis, L., Adikimenakis, A., Gkotinakos, A., Devulapalli, V., Liebscher, C. H., Androulidaki, M., Hübner, R., Karakostas, Th, Georgakilas, A., Komninou, Ph, Dimakis, E., Dimitrakopulos, G. P.

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Nanofabrication of normally-off GaN vertical nanowire MESFETs von Doundoulakis, G, Adikimenakis, A, Stavrinidis, A, Tsagaraki, K, Androulidaki, M, Iacovella, F, Deligeorgis, G, Konstantinidis, G, Georgakilas, A

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InN: Breaking the limits of solid-state electronics von Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.

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In-situ SiNx/InN structures for InN field-effect transistors von Zervos, Ch, Adikimenakis, A., Beleniotis, P., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry von Iliopoulos, E., Adikimenakis, A., Giesen, C., Heuken, M., Georgakilas, A.

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Current conduction mechanism and electrical break-down in InN grown on GaN von Kuzmik, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A.

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Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy von Kruse, J. E., Lymperakis, L., Eftychis, S., Adikimenakis, A., Doundoulakis, G., Tsagaraki, K., Androulidaki, M., Olziersky, A., Dimitrakis, P., Ioannou-Sougleridis, V., Normand, P., Koukoula, T., Kehagias, Th, Komninou, Ph, Konstantinidis, G., Georgakilas, A.

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Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors von Zervos, Ch, Adikimenakis, A, Bairamis, A, Kostopoulos, A, Kayambaki, M, Tsagaraki, K, Konstantinidis, G, Georgakilas, A

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Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer von Bairamis, A., Zervos, Ch, Adikimenakis, A., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates von Kehagias, Th, Dimitrakopulos, G. P., Ajagunna, A. O., Koukoula, T., Tsagaraki, K., Adikimenakis, A., Komninou, Ph, Georgakilas, A.

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The Critical Temperature of Superconducting Aluminum Films von Arutyunov, K. Yu, Sedov, E. A., Zavialov, V. V., Stavrinidis, A., Stavrinidis, G., Chatzopoulos, Z., Adikimenakis, A., Konstantinidis, G., Florini, N., Chatzopoulou, P., Kehagias, T., Dimitrakopulos, G. P., Komninou, P.

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Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy von Dimakis, E., Iliopoulos, E., Tsagaraki, K., Adikimenakis, A., Georgakilas, A.

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Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions von Adikimenakis, A., Androulidaki, M., Foundoulaki Salhin, E., Tsagaraki, K., Doundoulakis, G., Kuzmik, J., Georgakilas, A.

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Elimination of surface band bending on N-polar InN with thin GaN capping von Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A.

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Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r -plane sapphire von Adikimenakis, A., Lotsari, A., Dimitrakopulos, G. P., Kehagias, Th, Aretouli, K. E., Tsagaraki, K., Androulidaki, M., Komninou, Ph, Georgakilas, A.

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Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy von Sahonta, S.-L., Dimitrakopulos, G. P., Kehagias, Th, Kioseoglou, J., Adikimenakis, A., Iliopoulos, E., Georgakilas, A., Kirmse, H., Neumann, W., Komninou, Ph

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GaN heterostructures with diamond and graphene von Pécz, B, Tóth, L, Tsiakatouras, G, Adikimenakis, A, Kovács, A, Duchamp, M, Dunin-Borkowski, R E, Yakimova, R, Neumann, P L, Behmenburg, H, Foltynski, B, Giesen, C, Heuken, M, Georgakilas, A

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Comparative study of AlN dielectric films’ electrical properties for MEMS capacitive switches von Koutsoureli, M., Adikimenakis, A., Michalas, L., Papandreou, E., Stavrinidis, G., Konstantinidis, G., Georgakilas, A., Papaioannou, G.

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Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth von Iliopoulos, E., Adikimenakis, A., Dimakis, E., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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High electron mobility transistors based on the AlN/GaN heterojunction von Adikimenakis, A., Aretouli, K.E., Iliopoulos, E., Kostopoulos, A., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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