Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap von Davydov, V.Yu, Klochikhin, A.A., Seisyan, R.P., Emtsev, V.V., Ivanov, S.V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A.V., Aderhold, J., Semchinova, O., Graul, J.

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Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1) von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Ivanov, S.V., Vekshin, V.V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A.V., Hashimoto, A., Yamamoto, A., Aderhold, J., Graul, J., Haller, E.E.

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Band Gap of Hexagonal InN and InGaN Alloys von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Furthmüller, J., Aderhold, J., Graul, J., Mudryi, A.V., Harima, H., Hashimoto, A., Yamamoto, A., Haller, E.E.

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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions von Rotter, T., Mistele, D., Stemmer, J., Fedler, F., Aderhold, J., Graul, J., Schwegler, V., Kirchner, C., Kamp, M., Heuken, M.

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates von Aderhold, J., Davydov, V.Yu, Fedler, F., Klausing, H., Mistele, D., Rotter, T., Semchinova, O., Stemmer, J., Graul, J.

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Photoluminescence, depth profile, and lattice instability of hexagonal InN films von Semchinova, O. K., Aderhold, J., Graul, J., Filimonov, A., Neff, H.

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Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys von Davydov, V. Yu, Klochikhin, A. A., Emtsev, V. V., Smirnov, A. N., Goncharuk, I. N., Sakharov, A. V., Kurdyukov, D. A., Baidakova, M. V., Vekshin, V. A., Ivanov, S. V., Aderhold, J., Graul, J., Hashimoto, A., Yamamoto, A.

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First AlGaN/GaN MOSFET with photoanodic gate dielectric von Mistele, D, Rotter, T, Röver, K.S, Paprotta, S, Seyboth, M, Schwegler, V, Fedler, F, Klausing, H, Semchinova, O.K, Stemmer, J, Aderhold, J, Graul, J

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Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres von Mistele, D., Fedler, F., Klausing, H., Rotter, T., Stemmer, J., Semchinova, O.K., Aderhold, J.

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Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction von Fedler, F., Hauenstein, R.J., Klausing, H., Mistele, D., Semchinova, O., Aderhold, J., Graul, J.

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Point defects in gamma-irradiated n-GaN von Emtsev, V V, Davydov, V Yu, Kozlovskii, V V, Lundin, V V, Poloskin, D S, Smirnov, A N, Shmidt, N M, Usikov, A S, Aderhold, J, Klausing, H, Mistele, D, Rotter, T, Stemmer, J, Semchinova, O, Graul, J

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Electrical properties of photoanodically generated thin oxide films on n-GaN von Rotter, T., Ferretti, R., Mistele, D., Fedler, F., Klausing, H., Stemmer, J., Semchinova, O.K., Aderhold, J., Graul, J.

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Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well von Kamata, N., Klausing, H., Fedler, F., Mistele, D., Aderhold, J., Semchinova, O. K., Graul, J., Someya, T., Arakawa, Y.

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HRTEM study of AlxGa1-xN/AlN DBR mirrors von PONCE, A, MOLINA, S. I, FEDLER, F, KLAUSING, H, SEMCHINOVA, O, ADERHOLD, J, GRAUL, J

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Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors von MISTELE, D, ROTTER, T, HORN, A, KATZ, O, BOUGRIOUA, Z, ADERHOLD, J, GRAUL, J, BAHIR, G, SALZMAN, J

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Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001) von Sanchez, A. M., Pacheco, F. J., Molina, S. I., Stemmer, J., Aderhold, J., Graul, J.

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Smooth GaN surfaces by photoinduced electro-chemical etching von Rotter, T, Aderhold, J, Mistele, D, Semchinova, O, Stemmer, J, Uffmann, D, Graul, J

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Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics von Mistele, D., Rotter, T., Bougrioua, Z., Röver, K.S., Fedler, F., Klausing, H., Stemmer, J., K Semchinova, O., Aderhold, J., Graul, J.

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Influence of Process Technology on DC-Performance of GaN-Based HFETs von Mistele, D., Rotter, T., Bougrioua, Z., Marso, M., Roll, H., Klausing, H., Fedler, F., Semchinova, O., Moerman, I., Graul, J.

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High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA-MBE von Fedler, F., Klausing, H., Hauenstein, R.J., Ponce, A., Molina, S.I., Semchinova, O., Aderhold, J., Graul, J.

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