High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET von Aniel, F, Enciso-Aguilar, M, Giguerre, L, Crozat, P, Adde, R, Mack, T, Seiler, U, Hackbarth, Th, Herzog, H.J, König, U, Raynor, B

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Complex current gain and cutoff frequency determination of HBTs von Zerounian, N, Aniel, F, Adde, R

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Microwave performances of silicon heterostructure-FETs von Aniel, F., Enciso, M., Richard, S., Giguerre, L., Zerounian, N., Crozat, P., Adde, R., Hackbarth, T., Herzog, J-H., König, U.

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Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor von Cavassilas, N., Aniel, F., Boucaud, P., Adde, R., Maher, H., Décobert, J., Scavennec, A.

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Feasibility of picosecond electrical sampling using GaAs FET von Hafdallah, H., Ouslimani, A., Adde, R., Vernet, G., Crozat, P.

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Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors von Aniel, F., Boucaud, P., Sylvestre, A., Crozat, P., Julien, F. H., Adde, R., Jin, Y.

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Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP von Sylvestre, A., Aniel, F., Boucaud, P., Julien, F. H., Crozat, P., De Lustrac, A., Adde, R., Jin, Y., Praseuth, J. P.

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Self heating in InP DHBT technology for 40Gbit/s ICs von ABBOUN, M, ZEROUNIAN, N, DUBOIS, A, GIGUERRE, L, ANIEL, F, ADDE, R, BLAYAC, S, RIET, M, KONCZYKOWSKA, A

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Characteristics of GaAs/AlGaAs HEMT's fabricated by X-ray lithography von Lafontaine, H., Haghiri-Gosnet, A.M., Jin, Y., Crozat, P., Adde, R., Chaker, M., Pepin, H., Rousseaux, F., Launois, H.

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Large-signal model of picosecond FETs and measurement of the step response von Ouslimani, A., Vernet, G., Crozat, P., Adde, R.

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Gate Length Scaling in High fMAX Si/SiGe n-MODFET von Anie, F., Enciso-Aguilar, M., Crozat, P., Adde, R., Hackbarth, T., Seiler, U., Herzog, H.-J., Konig, U., von Kanel, H.

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Complex current gain and cutoff frequencydetermination of HBTs von Zerounian, N., Aniel, F., Adde, R.

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Complex current gain and cutoff frequency determination of HBTs von Zerounian, N, Aniel, F, Adde, R

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Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs von Cavassilas, Nicolas, Aniel, Frédéric, Fishman, Guy, Adde, Robert

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Design of fast Josephson arithmetic circuits von de Lustrac, A., Crozat, P., Adde, R.

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Switching time limits of loaded OR/AND RCJL Josephson logic gates von de Lustrac, A., Adde, R.

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SiGe heterojunction bipolar transistor with 213GHz f^sub T^ at 77K von Zerounian, N, Aniel, F, Adde, R, Gruhle, A

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SiGe heterojunction bipolar transistor with 213GHz f T at 77 K von Zerounian, N., Aniel, F., Adde, R., Gruhle, A.

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SiGe heterojunction bipolar transistor with 213GHz f sub( T) at 77K von Zerounian, N, Aniel, F, Adde, R, Gruhle, A

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DC and high frequency performance of 0.1 µm n-type Si/Si^sub 0.6^Ge^sub 0.4^ MODFET with f^sub MAX^ = 188 GHz at 300K and f^sub MAX^ = 230 GHz at 50K von Enciso-Aguilar, M, Aniel, F, Crozat, P, Adde, R, Herzog, H-J, Hackbarth, T, König, U, von Känel, H

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