Use of scanning capacitance microscopy for controlling wafer processing von Jeandupeux, O, Marsico, V, Acovic, A, Fazan, P, Brune, H, Kern, K

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P069 Intraperitoneal injection of bone marrow derived-mesenchymal stem cells increases total number of colon-infiltrating inflammatory dendritic cells and macrophages and aggravate... von Acovic, A, Simovic Markovic, B, Gazdic, M, Arsenijevic, A, Volarevic, A, Kanjevac, T, Jovicic, N, Jakovljevic, J, Arsenijevic, M, Arsenijevic, N, Lukic, M L, Volarevic, V

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P094 Strain dependent difference in the progression of dextran sulphate sodium induced colitis is a consequence of the cross-talk between colon-infiltrating dendritic cells and T r... von Simovic Markovic, B, Acovic, A, Gazdic, M, Arsenijevic, A, Volarevic, A, Kanjevac, T, Jovicic, N, Jakovljevic, J, Arsenijevic, M, Arsenijevic, N, Lukic, M L, Volarevic, V

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Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques von Selmi, L., Pavesi, M., Wong, H.-S.P., Acovic, A., Sangiorgi, E.

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Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current von Acovic, A., Dutoit, M., Ilegems, M.

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High-performance devices for a 0.15- mu m CMOS technology von Shahidi, G.G., Warnock, J., Fischer, S., McFarland, P.A., Acovic, A., Subbanna, S., Ganin, E., Crabbe, E., Comfort, J., Sun, J.Y.-C., Ning, T.H., Davari, B.

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Chemical vapor deposition of rough-morphology silicon films over a broad temperature range von DANA, S. S, ANDERLE, M, RUBLOFF, G. W, ACOVIC, A

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BORON REDISTRIBUTION IN ARSENIC-IMPLANTED SILICON AND SHORT-CHANNEL EFFECTS IN METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS von SADANA, DK, ACOVIC, A, DAVARI, B, GRUTZMACHER, D, HANAFI, H, CARDONE, F

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Optimized silicon-rich oxide (SRO) deposition process for 5 V only flash EEPROM applications von Dori, L., Acovic, A., DiMaria, D.J., Hsu, C.-H.

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Effects of X-ray irradiation on GIDL in MOSFETs von Acovic, A., Hsu, C.C.-H., Hsia, L.-C., Balasinski, A., Ma, T.-P.

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A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature von Acovic, A., Dutoit, M., Ilegems, M.

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A review of hot-carrier degradation mechanisms in MOSFETs von Acovic, Alexander, La Rosa, Giuseppe, Sun, Yuan-Chen

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Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY von Mohammad, S.N., Fiorenza, G., Acovic, A., Johnson, J.B., Carter, R.L.

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Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs von Acovic, A., Sadana, D.K., Davari, B., Grutzmacher, D., Cardone, F.

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Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide von Acovic, A., Hsu, C.C.-H., Hsia, L.C., Aitken, J.M.

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NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies von La Rosa, G., Guarin, F., Rauch, S., Acovic, A., Lukaitis, J., Crabbe, E.

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EFFECT OF HYDROGEN ANNEALING ON HOT-CARRIER INSTABILITY OF X-RAY-IRRADIATED CMOS DEVICES von HSU, CCH, WANG, LK, ZICHERMAN, D, ACOVIC, A

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Mechanism of Stress-Induced Leakage Due to Plasma Charging and Effect of Oxide Thickness von Abadeer, W., Hueckel, G., Acovic, A., Ray, A.

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A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs von Selmi, L., Pavesi, M., Hon-Sum Wong, Acovic, A., Sangiorgi, E.

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Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection von Wu, E., Lo, S.H., Abadeer, W., Acovic, A., Buchanan, D., Furukawa, T., Brochu, D., Dufresne, R.

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