A universal tool for stability predictions of biotherapeutics, vaccines and in vitro diagnostic products von Huelsmeyer, M., Kuzman, D., Bončina, M., Martinez, J., Steinbrugger, C., Weusten, J., Calero-Rubio, C., Roche, W., Niederhaus, B., VanHaelst, Y., Hrynyk, M., Ballesta, P., Achard, H., Augusto, S., Guillois, M., Pszczolinski, C., Gerasimov, M., Neyra, C., Ponduri, D., Ramesh, S., Clénet, D.

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Al2O3 tunnel barrier as a good candidate for spin injection into silicon von BENABDERRAHMANE, R, KANOUN, M, BRUYANT, N, BARADUC, C, BSIESY, A, ACHARD, H

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Magnetic and electrical characterization of “ferromagnet/insulator/silicon” diodes von Duluard, C., Bsiesy, A., Filipe, A., Francinelli, A., Achard, H., Safarov, V.

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A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices von Lazarov, V K, Kohn, A, Uhrmann, T, Dimopoulos, T, Brückl, H, Achard, H, Baraduc, C, Vizzini, S, Oughaddou, H, Aufray, B, d'Avitaya, F A

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Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy von Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R., Ashburn, P.

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Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma von Macé, H., Achard, H., Peccoud, L.

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Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy von Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R., Ashburn, P.

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Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications von Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

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Device processing and integration of ferroelectric thin films for memory applications von Achard, H., Macé, H., Peccoud, L.

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Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon von Kanoun, M., Benabderrahmane, R., Duluard, C., Baraduc, C., Bruyant, N., Bsiesy, A., Achard, H.

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Al sub(2)O sub(3) tunnel barrier as a good candidate for spin injection into silicon von Benabderrahmane, R, Kanoun, M, Bruyant, N, Baraduc, C, Bsiesy, A, Achard, H

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Al 2O 3 tunnel barrier as a good candidate for spin injection into silicon von Benabderrahmane, R., Kanoun, M., Bruyant, N., Baraduc, C., Bsiesy, A., Achard, H.

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Nickel vs. cobalt silicide integration for sub-50nm CMOS von Froment, B., Muller, M., Brut, H., Pantel, R., Carron, V., Achard, H., Halimaoui, A., Boeuf, F., Wacquant, F., Regnier, C., Ceccarelli, D., Palla, R., Beverina, A., DeJonghe, V., Spinelli, P., Leborgne, O., Bard, K., Lis, S., Tirard, V., Morin, P., Trentesaux, F., Gravey, V., Mandrekar, T., Rabilloud, D., Van, S., Olson, E., Diedrick, J.

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High Temperature Oxide (HTO) for non volatile memories applications von Candelier, Ph, Guillaumot, B., Mondon, F., Reimbold, G., Achard, H., Martin, F.

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Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects von Waite, A.M., Lloyd, N.S., Ashburn, P., Evans, A.G.R., Ernst, T., Achard, H., Deleonibus, S., Wang, Y., Hemment, P.

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Magnetic and electrical characterization of "ferromagnet/insulator/silicon" diodes von Duluard, C., Bsiesy, A., Filipe, A., Francinelli, A., Achard, H., Safarov, V.

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TORE SUPRA first-wall description and behaviour during the initial plasma experiments von Grosman, A., Achard, M.-H., Chappuis, P., Cordier, J.-J., Deschamps, P., Gauthier, E., Lipa, M.

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Study of dashed seed lines and capping layers for laser seeded zone melting recrystallization von Mermet, J.L., Achard, H., Bono, H., Joly, J.P.

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Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications von Ducroquet, F, Achard, H, Coudert, F, Previtali, B, Lugand, J-F, Ulmer, L, Farjot, T, Gobil, Y, Heitzmann, M, Tedesco, S, Nier, M E, Deleonibus, S

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Full CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications von Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

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