Committee on Food Nutrition von Pan, Shang-Jing, Sharpless, Katherine, Szpylka, John, Gilani, Sarwar, Woollard, David C, Phillips, John G, Williams, Sara M, Abernathy, Grant, Cardozo, Maria Sarita S, DeVries, Jonathan W, McCleary, Barry, O'Kane, Anthony, Rader, Jeanne I, Thomsen, Anders Pagh, Rodriguez, Marina Graciela Torres

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Optimal Control of an HIV Model with Gene Therapy and Latency Reversing Agents von Abernathy, Zachary, Abernathy, Kristen, Grant, Andrew, Hazelton, Paul

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Scanning Disk Rings and Winds in CO at 0.01–10 au: A High-resolution M-band Spectroscopy Survey with IRTF-iSHELL von Banzatti, Andrea, Abernathy, Kirsten M., Brittain, Sean, Bosman, Arthur D., Pontoppidan, Klaus M., Boogert, Adwin, Jensen, Stanley, Carr, John, Najita, Joan, Grant, Sierra, Sigler, Rocio M., Sanchez, Michael A., Kern, Joshua, Rayner, John T.

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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices von Grant, Perry C, Dou, Wei, Alharthi, Bader, Grant, Joshua M, Tran, Huong, Abernathy, G, Mosleh, Aboozar, Du, Wei, Li, Baohua, Mortazavi, Mansour, Naseem, Hameed A, Yu, Shui-Qing

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Electrically injected GeSn lasers on Si operating up to 100  K von Zhou, Yiyin, Miao, Yuanhao, Ojo, Solomon, Tran, Huong, Abernathy, Grey, Grant, Joshua M., Amoah, Sylvester, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing

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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission von Abernathy, Grey, Ojo, Solomon, Said, Abdulla, Grant, Joshua M., Zhou, Yiyin, Stanchu, Hryhorii, Du, Wei, Li, Baohua, Yu, Shui-Qing

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How Do We Use Dashboards to Enhance Quality in Cardiac Anesthesia? von Hensley, Nadia B., Grant, Michael C., Cho, Brian C., Suffredini, Giancarlo, Abernathy, James A.

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All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K von Margetis, Joe, Zhou, Yiyin, Dou, Wei, Grant, Perry C., Alharthi, Bader, Du, Wei, Wadsworth, Alicia, Guo, Qianying, Tran, Huong, Ojo, Solomon, Abernathy, Grey, Mosleh, Aboozar, Ghetmiri, Seyed A., Thompson, Gregory B., Liu, Jifeng, Sun, Greg, Soref, Richard, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers von Abernathy, Grey, Ojo, Solomon, Grant, Joshua M., Zhou, Yiyin, Du, Wei, Kuchuk, Andrian, Li, Baohua, Yu, Shui-Qing

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Development of Monolithic Germanium-Tin on Si Avalanche Photodiodes for Infrared Detection von Rudie, Justin, Amoah, Sylvester, Wang, Xiaoxin, Kumar, Rajesh, Abernathy, Grey, Akwabli, Steven, Grant, Perry C., Liu, Jifeng, Li, Baohua, Du, Wei, Yu, Shui-Qing

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Genome sequence of the palaeopolyploid soybean von Schmutz, Jeremy, Cannon, Steven B, Schlueter, Jessica, Ma, Jianxin, Mitros, Therese, Nelson, William, Hyten, David L, Song, Qijian, Thelen, Jay J, Cheng, Jianlin, Xu, Dong, Hellsten, Uffe, Peto, Myron, Grant, David, Cregan, Perry, Shoemaker, Randy C

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Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications von Stanchu, Hryhorii, Abernathy, Grey, Grant, Joshua, de Oliveira, Fernando M., Mazur, Yuriy I., Liu, Jifeng, Du, Wei, Li, Baohua, Salamo, Gregory J., Yu, Shui-Qing

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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission von Olorunsola, Oluwatobi, Ojo, Solomon, Abernathy, Grey, Zhou, Yiyin, Amoah, Sylvester, Grant, P C, Dou, Wei, Margetis, Joe, Tolle, John, Kuchuk, Andrian, Du, Wei, Li, Baohua, Zhang, Yong-Hang, Yu, Shui-Qing

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Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics von Abernathy, Grey, Zhou, Yiyin, Ojo, Solomon, Alharthi, Bader, Grant, Perry C., Du, Wei, Margetis, Joe, Tolle, John, Kuchuk, Andrian, Li, Baohua, Yu, Shui-Qing

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Investigation of the cap layer for improved GeSn multiple quantum well laser performance von Abernathy, Grey, Ojo, Solomon, Stanchu, Hryhorii, Zhou, Yiyin, Olorunsola, Oluwatobi, Grant, Joshua, Du, Wei, Jheng, Yue-Tong, Chang, Guo-En, Li, Baohua, Yu, Shui-Qing

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Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement von Grant, Perry C, Margetis, Joe, Du, Wei, Zhou, Yiyin, Dou, Wei, Abernathy, Grey, Kuchuk, Andrian, Li, Baohua, Tolle, John, Liu, Jifeng, Sun, Greg, Soref, Richard A, Mortazavi, Mansour, Yu, Shui-Qing

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SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review von Olorunsola, Oluwatobi, Said, Abdulla, Ojo, Solomon, Stanchu, Hryhorii, Abernathy, Grey, Amoah, Sylvester, Saha, Samir, Wangila, Emmanuel, Grant, Joshua, Acharya, Sudip, Miller, Lucas, Rosler, Kyle, Jheng, Yue-Tong, Chang, Guo-En, Li, Baohua, Salamo, Gregory, Yu, Shui-Qing, Du, Wei

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Electrically injected GeSn lasers with peak wavelength up to 2.7  μm von Zhou, Yiyin, Ojo, Solomon, Wu, Chen-Wei, Miao, Yuanhao, Tran, Huong, Grant, Joshua M., Abernathy, Grey, Amoah, Sylvester, Bass, Jake, Salamo, Gregory, Du, Wei, Chang, Guo-En, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing

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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications von Olorunsola, Oluwatobi, Said, Abdulla, Ojo, Solomon, Abernathy, Grey, Saha, Samir, Wangila, Emmanuel, Grant, Joshua, Stanchu, Hryhorii, Acharya, Sudip, Du, Wei, Jheng, Yue-Tong, Chang, Guo-En, Li, Baohua, Salamo, Gregory, Yu, Shui-Qing

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Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate von Grant, Perry C., Margetis, Joe, Zhou, Yiyin, Dou, Wei, Abernathy, Grey, Kuchuk, Andrian, Du, Wei, Li, Baohua, Tolle, John, Liu, Jifeng, Sun, Greg, Soref, Richard A., Mortazavi, Mansour, Yu, Shui-Qing

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