Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection von Kang, B.S., Kim, S., Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.

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Effect of Si Co Doping on Ferromagnetic Properties of GaGdN von Hite, J.K., Frazier, R.M., Davies, R.P., Thaler, G.T., Abernathy, C.R., Pearton, S.J., Zavada, J.M., Brown, E., Hömmerich, U.

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Comparison of Pt/GaN and Pt/4H-SiC gas sensors von Kim, Jihyun, Gila, B.P., Abernathy, C.R., Chung, G.Y., Ren, F., Pearton, S.J.

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GaN electronics for high power, high temperature applications von Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.

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AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing von Kang, B.S., Suku Kim, Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.

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Effects of defects and doping on wide band gap ferromagnetic semiconductors von Pearton, S.J, Abernathy, C.R, Thaler, G.T, Frazier, R, Ren, F, Hebard, A.F, Park, Y.D, Norton, D.P, Tang, W, Stavola, M, Zavada, J.M, Wilson, R.G

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Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs von Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

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Advances in wide bandgap materials for semiconductor spintronics von Pearton, S.J., Abernathy, C.R., Norton, D.P., Hebard, A.F., Park, Y.D., Boatner, L.A., Budai, J.D.

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Luminescence characteristics of Er-doped GaN semiconductor thin films von Zavada, J.M, Thaik, Myo, Hömmerich, U, MacKenzie, J.D, Abernathy, C.R, Pearton, S.J, Wilson, R.G

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Wet chemical etching survey of III-nitrides von Vartuli, C.B., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Ren, F., Zolper, J.C., Shul, R.J.

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Gate breakdown characteristics of MgO/GaN MOSFETs von Cho, Hyun, Lee, K.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F.

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Influence of gate oxide thickness on Sc2O3/GaN MOSFETs von Cho, Hyun, Lee, K.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F.

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Schottky rectifiers fabricated on free-standing GaN substrates von Johnson, J.W., LaRoch, J.R., Ren, F., Gila, B.P., Overberg, M.E., Abernathy, C.R., Chyi, J.-I., Chuo, C.C., Nee, T.E., Lee, C.M., Lee, K.P., Park, S.S., Park, Y.J., Pearton, S.J.

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Dry etching of GaN and related materials: comparison of techniques von Jewon Lee, Hyun Cho, Hays, D.C., Abernathy, C.R., Pearton, S.J., Shul, R.J., Vawter, G.A., Han, J.

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Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN von Kent, D.G, Lee, K.P, Zhang, A.P, Luo, B, Overberg, M.E, Abernathy, C.R, Ren, F, Mackenzie, K.D, Pearton, S.J, Nakagawa, Y

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Comparison of plasma etch techniques for III–V nitrides von Shul, R.J, Vawter, G.A, Willison, C.G, Bridges, M.M, Lee, J.W, Pearton, S.J, Abernathy, C.R

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High-density plasma etch selectivity for the III–V nitrides von Shul, R.J, Willison, C.G, Bridges, M.M, Han, J, Lee, J.W, Pearton, S.J, Abernathy, C.R, MacKenzie, J.D, Donovan, S.M

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Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics von Ren, F, Abernathy, C.R, MacKenzie, J.D, Gila, B.P, Pearton, S.J, Hong, M, Marcus, M.A, Schurman, M.J, Baca, A.G, Shul, R.J

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Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy von Antonell, M.J, Abernathy, C.R, Sher, A, Berding, M, Van Schilfgaarde, M, Sanjuro, A, Wong, K

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Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices von Gila, B.P., Ren, F., Abernathy, C.R.

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