Impact of Al, Ni, and TiN Metal Gates On ZrO2-MOS Capacitors von Abermann, Stephan M., Efavi, Joseph, Lugstein, Alois, Auer, Erwin, Gottlob, Heiner, Schmidt, Mathias, Lemme, Max, Bertagnolli, Emmerich

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ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT Scalability von Bethge, Ole, Zimmermann, Christina, Lutzer, Bernhard, Simsek, Sinan, Abermann, Stephan, Bertagnolli, Emmerich

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Pt/Ge Schottky-Barrier Reduction by Rapid Thermal Diffusion of P Dopants von Henkel, Christoph, Abermann, Stephan, Bethge, Ole, Bertagnolli, Emmerich

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Atomic Layer Deposition of High-κ/Metal Gate Stack MOSFET-Devices on Strained Silicon-on-Insulator Substrates von Henkel, Christoph, Abermann, Stephan, Bethge, Ole, Reiche, Manfred, Bertagnolli, Emmerich

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Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr \hbox or Hf \hbox von Kuzmik, J., Pozzovivo, G., Abermann, S., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Bertagnolli, E., Strasser, G., Pogany, D.

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Atomic Layer Deposition of High-k Oxides on InAlN/GaN-based Materials von Abermann, Stephan, Ostermaier, Clemens, Pozzovivo, Gianmauro, Kuzmik, Jan, Bethge, Ole, Henkel, Christoph, Strasser, Gottfried, Pogany, Dionyz, Giesen, Christoph, Heuken, Michael, Alomari, Mohammed, Kohn, E., Bertagnolli, Emmerich

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