Formation of GdAl2 Laves Phase in Gadolinium Zinc Oxide Epitaxy Film von Zeidan, M. M., Abdullah, A., Abedrabbo, S.

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Neutron Irradiation to Transmute Zinc into Gallium von Zeidan, M M, Abedrabbo, S

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Engineered Stresses for a Functional Si Light Emitter at Bandgap: An Overview von Abedrabbo, S., Ravindra, N. M., Fiory, A. T.

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Exercise reduces the anxiogenic effects of meta-chlorophenylpiperazine: The role of 5-HT2C receptors in the bed nucleus of the stria terminalis von Fox, James H, Boucher, Melissa N, Abedrabbo, Khalil S, Hare, Brendan D, Grimmig, Bethany A, Falls, William A, Hammack, Sayamwong E

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Analytical study of thermal annealing behaviour of erbium emission in Er2O3-sol―gel silica films von ABEDRABBO, S, LAHLOUH, B, FIORY, A. T

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Processing for Highly Emissive CZ-Silicon by Depositing Stressed Sol–Gel Films von Abedrabbo, S., Fiory, A. T., Ravindra, N. M.

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Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol–gel films von Abedrabbo, S., Lahlouh, B., Shet, S., Fiory, A.T.

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Correction: Formation of GdAl2 Laves Phase in Gadolinium Zinc Oxide Epitaxy Film von Zeidan, M. M., Abdullah, A., Abedrabbo, S.

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Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing von Abedrabbo, S., Mohammed, Q., Fiory, A.T.

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Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films von Abedrabbo, S., Fiory, A. T., Ravindra, N. M.

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Emissivity measurements and modeling of silicon-related materials: An overview von RAVINDRA, N. M, SOPORI, B, GOKCE, O. H, CHENG, S. X, SHENOY, A, JIN, L, ABEDRABBO, S, CHEO, W, ZHANG, Y

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Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO^sub 2^:Er Films von Abedrabbo, S, Fiory, A T, Ravindra, N M

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Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO sub( 2):Er Films von Abedrabbo, S, Fiory, A T, Ravindra, N M

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Ion beam mixing for processing of nanostructure materials von ABEDRABBO, S, ARAFAH, D. E, GOKCE, O, WIELUNSKI, L. S, GHARMBEH, M, CELIK, O, RAVINDRA, N. M

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Analytical study of thermal annealing behaviour of erbium emission in Er 2 O 3 -sol–gel silica films von Abedrabbo, S, Lahlouh, B, Fiory, A T

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Temperature-dependent emissivity of silicon-related materials and structures von Ravindra, N.M., Abedrabbo, S., Wei Chen, Tong, F.M., Nanda, A.K., Speranza, A.C.

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Infrared photoluminescence of sol–gel spin-coated films of rare-earth activated lanthanum silicate von Juwhari, H.K., Kailani, M.H., Lahlouh, B.I., Abedrabbo, S.A., Saleh, K.A., White, W.B.

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Modeling emissivity of rough and textured silicon wafers von Sopori, Bhushan L, Chen, Wei, Abedrabbo, S, Ravindra, N M

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Evidence from spectral emissometry for conduction intraband transitions in the intrinsic regime for silicon von Abedrabbo, S, Hensel, J C, Fiory, A T, Ravindra, N M

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Wafer emissivity independent temperature measurements von Abedrabbo, S., Tong, F. M., Ravindra, N. M., Gelpey, J., Marcus, S., Fiory, A. T.

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