Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon von Donaev, S.B., Shirinov, G.M., Ergasheva, S., Rakhimov, A.M., Wang, Shenghao, Abduvayitov, A.A.

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Changes in the electronic structure of the Si surface as a result of ion implantation von Donaev, S.B., Ziyamukhamedova, U.A., Kenjaeva, M., Shirinov, G.M., Rakhimov, A.M., Abduvayitov, A.A.

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