SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes von Rebaoui, Z., Bachir Bouiajra, W., Abboun Abid, M., Saidane, A., Jammel, D., Henini, M., Felix, J.F.

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γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N von Teffahi, A., Hamri, D., Djeghlouf, A., Abboun Abid, M., Saidane, A., Al Saqri, N., Felix, J.F., Henini, M.

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rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N von Teffahi, A, Hamri, D, Djeghlouf, A, Abid, M Abboun, Saidane, A, Al Saqri, N, Felix, JF, Henini, M

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InP HBT driver circuit optimization for high-speed ETDM transmission von Kauffmann, N., Blayac, S., Abboun, M., Andre, P., Aniel, F., Riet, M., Benchimol, J.-L., Godin, J., Konczykowska, A.

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First-principles investigations of electronic and optical properties of Er-doped GaN involved in ErGaN/ErN quantum well heterostructures von Amiris, S., Agroui, K., Amiri, B., Abboun Abid, M., Belghachi, A.

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Self heating in InP DHBT technology for 40Gbit/s ICs von ABBOUN, M, ZEROUNIAN, N, DUBOIS, A, GIGUERRE, L, ANIEL, F, ADDE, R, BLAYAC, S, RIET, M, KONCZYKOWSKA, A

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Transmission line matrix (TLM) modeling of self-heating in power PIN diodes von Mimouni, S., Saidane, A., Chalabi, D., Abboun-Abid, M.

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InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model von Blayac, S., Riet, M., Benchimol, J.L., Abboun, M., Aniel, F., Berdaguer, P., Duchenois, A.M., Konczykowska, A., Godin, J.

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Self Heating in InP DHBT Technology for 40 Gb/s ICs von Giguerre, L., Abboun, M., Aniel, F., Zerounian, N., Dubois, A., Adde, R., Blayac, S., Riet, M., Konczykowska, A.

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