Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures von Chichibu, S. F., Abare, A. C., Minsky, M. S., Keller, S., Fleischer, S. B., Bowers, J. E., Hu, E., Mishra, U. K., Coldren, L. A., DenBaars, S. P., Sota, T.

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Indium tin oxide contacts to gallium nitride optoelectronic devices von Margalith, T., Buchinsky, O., Cohen, D. A., Abare, A. C., Hansen, M., DenBaars, S. P., Coldren, L. A.

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Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells von Wu, X. H., Elsass, C. R., Abare, A., Mack, M., Keller, S., Petroff, P. M., DenBaars, S. P., Speck, J. S., Rosner, S. J.

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Optical properties of InGaN quantum wells von Chichibu, S.F, Abare, A.C, Mack, M.P, Minsky, M.S, Deguchi, T, Cohen, D, Kozodoy, P, Fleischer, S.B, Keller, S, Speck, J.S, Bowers, J.E, Hu, E, Mishra, U.K, Coldren, L.A, DenBaars, S.P, Wada, K, Sota, T, Nakamura, S

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Growth and characterization of bulk InGaN films and quantum wells von Keller, S., Keller, B. P., Kapolnek, D., Abare, A. C., Masui, H., Coldren, L. A., Mishra, U. K., Den Baars, S. P.

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Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire von Hansen, M., Fini, P., Zhao, L., Abare, A. C., Coldren, L. A., Speck, J. S., DenBaars, S. P.

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Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes von Chichibu, S., Cohen, D. A., Mack, M. P., Abare, A. C., Kozodoy, P., Minsky, M., Fleischer, S., Keller, S., Bowers, J. E., Mishra, U. K., Coldren, L. A., Clarke, D. R., DenBaars, S. P.

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Tenure of Australia's forests (2023) von ABARES

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Forests of Australia (2023) von ABARES

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Gain spectroscopy on InGaN/GaN quantum well diodes von Kuball, M., Jeon, E.-S., Song, Y.-K., Nurmikko, A. V., Kozodoy, P., Abare, A., Keller, S., Coldren, L. A., Mishra, U. K., DenBaars, S. P., Steigerwald, D. A.

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High efficiency GaN-based LEDs and lasers on SiC von Edmond, John, Abare, Amber, Bergman, Mike, Bharathan, Jayesh, Lee Bunker, Kristin, Emerson, Dave, Haberern, Kevin, Ibbetson, James, Leung, Michael, Russel, Phil, Slater, David

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Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes von Young, D. K., Mack, M. P., Abare, A. C., Hansen, M., Coldren, L. A., Denbaars, S. P., Hu, E. L., Awschalom, D. D.

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Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence von Minsky, M. S., Fleischer, S. B., Abare, A. C., Bowers, J. E., Hu, E. L., Keller, S., Denbaars, S. P.

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Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells von Schmidt, H., Abare, A. C., Bowers, J. E., Denbaars, S. P., Imamoǧlu, A.

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Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells von Özgür, Ü., Bergmann, M. J., Casey, H. C., Everitt, H. O., Abare, A. C., Keller, S., DenBaars, S. P.

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Cleaved and etched facet nitride laser diodes von Abare, A.C., Mack, M.P., Hansen, M., Sink, R.K., Kozodoy, P., Keller, S., Speck, J.S., Bowers, J.E., Mishra, U.K., Coldren, L.A., DenBaars, S.P.

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Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy von Sun, Chi-Kuang, Chu, Shih-Wei, Tai, Shi-Peng, Keller, Stacia, Abare, A., Mishra, U. K., Denbaars, Steven P.

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Optical Spectroscopy of InGaN/GaN Quantum Wells von Berkowicz, E., Gershoni, D., Bahir, G., Abare, A.C., DenBaars, S.P., Coldren, L.A.

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Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD von Mack, M.P., Abare, A.C., Hansen, M., Kozodoy, P., Keller, S., Mishra, U., Coldren, L.A., DenBaars, S.P.

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MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells von Wu, Xing Hui, Mack, M.P., Cabané, F., Minsky, M.S., Hu, E., Keller, S., Speck, James S., Mishra, Umesh K., Coldren, L.A., DenBaars, Steven P.

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