Above-threshold leakage in semiconductor lasers: An analytical physical model von Aarts, I.M.P., Sargent, E.H.

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Corrections to "above-threshold leakage in semiconductor lasers: an analytical physical model" von Aarts, I.M.P., Sargent, E.H.

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Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS model von Aarts, I.M.P., van de Sanden, M.C.M., Kessels, W.M.M.

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Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy von Aarts, I.M.P., Gielis, J.J.H., Grauls, P.M.J., Leewis, C.M., van de Sanden, M.C.M., Kessels, W.M.M.

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In Situ Defect Spectroscopy: Probing Dangling Bonds During a-Si: H Film Growth by Subgap Absorption von Kessels, W.M.M., Aarts, I.M.P., Pipino, A.C.R., Van de Sanden, M.C.M.

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Recent advances in evanescent-wave cavity ring-down spectroscopy von Pipino, A.C.R., Aarts, I.M.P., Hoefnagels, J.P.M., Kessels, W.M.M., van de Sanden, M.C.M.

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