Dual-Gate Characteristics of Amorphous \hbox Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors von Takechi, K., Nakata, M., Azuma, K., Yamaguchi, H., Kaneko, S.

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Highly water-impermeable SiNx film prepared using surface-wave-plasma chemical vapor deposition and improvement of the barrier performance for organic light-emitting displays von Ueno, Satoko, Konishi, Yoshiyuki, Azuma, Kazufumi

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The structures of highly transparent, water impermeable SiNx films prepared using surface-wave-plasma chemical vapor deposition for organic light-emitting displays von Ueno, Satoko, Konishi, Yoshiyuki, Azuma, Kazufumi

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New Widening Method of Depth of Focus for Phase-Modulated Excimer-Laser Crystallization von Taniguchi, Yukio, Endo, Takahiko, Azuma, Kazufumi, Matsumura, Masakiyo

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Dual-Gate Characteristics of Amorphous InGaZnO4 Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors von TAKECHI, Kazushige, NAKATA, Mitsuru, AZUMA, Kazufumi, YAMAGUCHI, Hirotaka, KANEKO, Setsuo

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Transparent silicon nitride films prepared by surface wave plasma chemical vapor deposition under low temperature conditions von Azuma, Kazufumi, Ueno, Satoko, Konishi, Yoshiyuki, Takahashi, Kazuhiro

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Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization von Taniguchi, Yukio, Endo, Takahiko, Azuma, Kazufumi, Matsumura, Masakiyo, Ishiwara, Hiroshi

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Surface Wave Plasma Oxidation at Low Temperature under Rare Gas Dilution von Goto, Masashi, Azuma, Kazufumi, Okamoto, Tetsuya, Nakata, Yukihiko

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Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits von Kawachi, Genshiro, Nakazaki, Yoshiaki, Ogawa, Hiroyuki, Jyumonji, Masayuki, Akita, Noritaka, Hiramatu, Masato, Azuma, Kazufumi, Warabisako, Terunori, Matsumura, Masakiyo

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Proposed Phase-Modulator Check System for Phase-Modulated Excimer-Laser Annealing von Taniguchi, Yukio, Azuma, Kazufumi, Matsumura, Masakiyo

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Development of an Intermediate Layer for Highly Reliable Encapsulation Structures for OLED Displays von Ueno, Satoko, Konishi, Yoshiyuki, Azuma, Kazufumi

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Highly Reliable Encapsulation Films for OLEDs Composed of SiNx and SiOxCy Prepared Using SWP-CVD von Ueno, Satoko, Yomogida, Mamoru, Suzuki, Masayasu, Konishi, Yoshiyuki, Azuma, Kazufumi

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Control of Plasma Parameters for High-Quality Hydrogenated Amorphous Carbon Growth von Azuma, Kazufumi, Inaba, Hiroshi, Tasaka, Kenji, Fujimaki, Shigehiko, Shirai, Hajime

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Highly Reliable Encapsulation Films for OLEDs Composed of SiN x and SiO x C y Prepared Using SWP-CVD von Ueno, Satoko, Yomogida, Mamoru, Suzuki, Masayasu, Konishi, Yoshiyuki, Azuma, Kazufumi

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Structural Study of Ultrathin Hydrogenated Amorphous Carbon Films Using Spectroscopic Ellipsometry and Ultraviolet Raman Spectroscopy von Azuma, Kazufumi, Inaba, Hiroshi, Tasaka, Kenji, Shirai, Hajime

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Early stage growth of hydrogenated amorphous carbon von Azuma, Kazufumi, Shirai, Hajime, Kouchi, Tetsu

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Optical emission spectroscopy study toward high rate growth of microcrystalline silicon von Fukuda, Yusuke, Sakuma, Yoshikazu, Fukai, Chisato, Fujimura, Yukihiro, Azuma, Kazufumi, Shirai, Hajime

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Novel Surface-Wave-Excited Plasma-Enhanced CVD System with Reciprocating Substrate Motion von Azuma, Kazufumi, Ueno, Satoko, Suzuki, Masayasu, Konishi, Yoshiyuki, Ishida, Shinichiro

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Improvement of InGaZnO 4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing von Nakata, Mitsuru, Takechi, Kazushige, Azuma, Kazufumi, Tokumitsu, Eisuke, Yamaguchi, Hirotaka, Kaneko, Setsuo

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Irradiation Damage in SiO 2 /Si System Induced by Photons and/or Ions in Photo-Oxidation and Plasma-Oxidation von Okamoto, Tetsuya, Ide, Tetsuya, Sasaki, Atsushi, Azuma, Kazufumi, Nakata, Yukihiko

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