LAOZI AND PROJECTIVE MEMORY IN LATE TOLSTOY'S SELF-REPRESENTATION von AZAROV, K.V.

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Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs von Titov, A.I., Karabeshkin, K.V., Struchkov, A.I., Nikolaev, V.I., Azarov, A., Gogova, D.S., Karaseov, P.A.

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Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms von Titov, A I, Karabeshkin, K V, Struchkov, A I, Karaseov, P A, Azarov, A

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Molecular effect on surface topography of GaN bombarded with PF4 ions von Titov, A.I., Karaseov, P.A., Belyakov, V.S., Karabeshkin, K.V., Arkhipov, A.V., Kucheyev, S.O., Azarov, A.Yu

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