Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction von Si, Mengwei, Zhang, Zhuocheng, Chang, Sou-Chi, Haratipour, Nazila, Zheng, Dongqi, Li, Junkang, Avci, Uygar E, Ye, Peide D

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Nearly Barrierless Polarization Switching Mechanisms in ZrO2 Having Perpendicular In-Plane Domain Walls von Noor, Manifa, Bergschneider, Matthew, Kim, Jongchan, Afroze, Nashrah, Khan, Asif Islam, Chang, Sou-Chi, Avci, Uygar E., Kummel, Andrew C., Cho, Kyeongjae

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Nearly Barrierless Polarization Switching Mechanisms in ZrO 2 Having Perpendicular In-Plane Domain Walls von Noor, Manifa, Bergschneider, Matthew, Kim, Jongchan, Afroze, Nashrah, Khan, Asif Islam, Chang, Sou-Chi, Avci, Uygar E, Kummel, Andrew C, Cho, Kyeongjae

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Process integration and future outlook of 2D transistors von O’Brien, Kevin P., Naylor, Carl H., Dorow, Chelsey, Maxey, Kirby, Penumatcha, Ashish Verma, Vyatskikh, Andrey, Zhong, Ting, Kitamura, Ande, Lee, Sudarat, Rogan, Carly, Mortelmans, Wouter, Kavrik, Mahmut Sami, Steinhardt, Rachel, Buragohain, Pratyush, Dutta, Sourav, Tronic, Tristan, Clendenning, Scott, Fischer, Paul, Putna, Ernisse S., Radosavljevic, Marko, Metz, Matt, Avci, Uygar

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Special Topic on Tunnel Field-Effect Transistors von Avci, Uygar E.

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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices von Silva, José P. B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe

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Computational Study of Temperature Effects on MOSFET Channel Material Benchmarking von Kim, Seong, Avci, Uygar E., Young, Ian A.

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Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs von Kim, Raseong, Avci, Uygar E., Young, Ian A.

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Tunnel Field-Effect Transistors: Prospects and Challenges von Avci, Uygar E., Morris, Daniel H., Young, Ian A.

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Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions von Zheng, Dongqi, Si, Mengwei, Chang, Sou-Chi, Haratipour, Nazila, Chen, Zhizhong, Charnas, Adam, Huang, Shouyuan, Wang, Kang, Dou, Letian, Xu, Xianfan, Avci, Uygar E., Ye, Peide D.

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Asymmetric Metal/α-In 2 Se 3 /Si Crossbar Ferroelectric Semiconductor Junction von Si, Mengwei, Zhang, Zhuocheng, Chang, Sou-Chi, Haratipour, Nazila, Zheng, Dongqi, Li, Junkang, Avci, Uygar E, Ye, Peide D

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Transistors based on two-dimensional materials for future integrated circuits von Das, Saptarshi, Sebastian, Amritanand, Pop, Eric, McClellan, Connor J., Franklin, Aaron D., Grasser, Tibor, Knobloch, Theresia, Illarionov, Yury, Penumatcha, Ashish V., Appenzeller, Joerg, Chen, Zhihong, Zhu, Wenjuan, Asselberghs, Inge, Li, Lain-Jong, Avci, Uygar E., Bhat, Navakanta, Anthopoulos, Thomas D., Singh, Rajendra

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Design of Low Voltage Tunneling-FET Logic Circuits Considering Asymmetric Conduction Characteristics von Morris, Daniel H., Avci, Uygar E., Rios, Rafael, Young, Ian A.

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Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects von Kim, Raseong, Avci, Uygar E., Young, Ian A.

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Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor von Chang, Sou-Chi, Avci, Uygar E., Nikonov, Dmitri E., Manipatruni, Sasikanth, Young, Ian A.

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Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal-Oxide-Semiconductor Capacitor von Chang, Sou-Chi, Avci, Uygar E., Nikonov, Dmitri E., Young, Ian A.

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Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs von Kim, Raseong, Avci, Uygar E., Young, Ian A.

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Improving Energy Efficiency of Low-Voltage Logic by Technology-Driven Design von Vaidyanathan, Kaushik, Morris, Daniel H., Avci, Uygar E., Liu, Huichu, Karnik, Tanay, Wang, Hong, Young, Ian A.

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A Thermodynamic Perspective of Negative-Capacitance Field-Effect Transistors von Chang, Sou-Chi, Avci, Uygar E., Nikonov, Dmitri E., Young, Ian A.

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Floating-Body Diode-A Novel DRAM Device von Avci, U. E., Kencke, D. L., Chang, P. L. D.

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