Deep Subwavelength Anti-slot Photonic Crystals Fabricated in Monolithic Silicon Photonics Technology von Allen, J. A., Arnold, K. P., Halimi, S. I., Ryder, L. D., Afzal, F. O., Bian, Y., Aboketaf, A., Dezfulian, K., Rakowski, M., Augur, R., Hirokawa, T., Nummy, K., Weiss, S. M.

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Integration challenges of porous ultra low- k spin-on dielectrics von Mosig, K, Jacobs, T, Brennan, K, Rasco, M, Wolf, J, Augur, R

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Mechanism of reliability failure in Cu interconnects with ultralow-κ materials von Michael, N. L., Kim, Choong-Un, Gillespie, P., Augur, R.

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Innovative Law and Policy Responses to the Opioid Crisis von Hodge, James G., Gulinson, Chelsea L., Barraza, Leila, Augur, Haley R., Castagne, Michelle, Cheff, Ashley, Hensley, Drew, Sobek, Madeline, Weisberg, Adina

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MONSOON SEASONS WATER QUALITY STATUS OF GROUND WATER SYSTEM IN TAKHATPUR, BILASPUR DISTRICT, CHHATTISGARH, INDIA von Kumar Yadav, Rakesh, R. Augur, M.

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Mechanism of electromigration failure in submicron Cu interconnects von MICHAEL, Nancy L, KIM, Choong-Un, JIANG, Qing-Tang, AUGUR, R. A, GILLESPIE, P

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Study of electron-scattering mechanism in nanoscale Cu interconnects von KIM, Choong-Un, PARK, Jaeyong, MICHAEL, Nancy, GILLESPIE, Paul, AUGUR, R. O. D

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Electromigration failure in ultra-fine copper interconnects von MICHAEL, Nancy L, KIM, Choong-Un, GILLESPIE, Paul, AUGUR, R. O. D

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Analysis of copper grains in damascene trenches after rapid thermal processing or furnace anneals von JIANG, Qing-Tang, NOWELL, Matt, FORAN, Brendan, FRANK, Aaron, HAVEMANN, R. H, PARIHAR, Vijay, AUGUR, R. A, LUTTMER, J. D

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Topographic Complexities and Solutions for High Density BEOL MIM Capacitors von Cheng, Lili, Kakita, Shinichiro, Fox, Robert, Motoyama, Emiko, Lee, Jusang, Azad, Nabil, Hart, Gregory, Ham, Sun, Sharma, Ankur, Beaudoin, Felix, Zhang, Galor Wenyi, de la Garza, Ernesto Gene, Babighian, Pietro, Wang, Tao, Yang, Xiaoming, Augur, Rod, Tang, Teck Jung

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Stress voiding and electromigration phenomena in aluminum alloys von Kordic, S., Augur, R.A., Dirks, A.G., Wolters, R.A.M.

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Reliability and microstructure of Al-Si-V-Pd alloy films for use in ultralarge scale integration von Dirks, A. G., Augur, R. A.

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Electromigration study of Cu/low k dual-damascene interconnects von Lee, K.-D., Lu, X., Ogawa, E.T., Matsuhashi, H., Ho, P.S., Blaschke, V.A., Augur, R.

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AlSiV and AlSiVPd films as alternatives for AlSiCu interconnect: microstructure and its impact on reliability von Dirks, A.G., Augur, R.A., De Veirman, A.E.M.

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Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies von Augur, R., Child, C., Ahn, J.H., Tang, T.J., Clevenger, L., Kioussis, D., Masuda, H., Srivastava, R., Oda, Y., Oguma, H., Quon, R., Kim, B., Sheng, H., Hirooka, S., Gupta, R., Thomas, A., Singh, S.M., Fang, Q., Schiwon, R., Hamieh, B., Wornyo, E., Allen, S., Kaltalioglu, E., Ribes, G., Zhang, G., Fryxell, T., Ogino, A., Shimada, E., Aizawa, H., Minda, H., Kim, S.O., Oki, T., Fujii, K., Pallachalil, M., Takewaki, T., Hu, C.K., Sundlof, B., Permana, D., Bolom, T., Engel, B., Labelle, C., Sapp, B., Nogami, T., Simon, A., Shobha, H., Gates, S., Ryan, E.T., Bonilla, G., Daubenspeck, T., Shaw, T., Osborne, G., Grill, A., Edelstein, D., Restaino, D., Molis, S., Spooner, T., Ferreira, P., Biery, G., Sampson, R.

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Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies von AUGUR, R, CHILD, C, QUON, R, KIM, B, SHENG, H, HIROOKA, S, GUPTA, R, THOMAS, A, SINGH, S. M, FANG, Q, SCHIWON, R, HAMIEH, B, AHN, J. H, WORNYO, E, ALLEN, S, KALTALIOGLU, E, RIBES, G, ZHANG, G, FRYXELL, T, OGINO, A, SHIMADA, E, AIZAWA, H, MINDA, H, TANG, T. J, KIM, S. O, OKI, T, FUJII, K, PALLACHALIL, M, TAKEWAKI, T, HU, C. K, SUNDLOF, B, PERMANA, D, BOLOM, T, ENGEL, B, CLEVENGER, L, LABELLE, C, SAPP, B, NOGAMI, T, SIMON, A, SHOBHA, H, GATES, S, RYAN, E. T, BONILLA, G, DAUBENSPECK, T, SHAW, T, KIOUSSIS, D, OSBORNE, G, GRILL, A, EDELSTEIN, D, RESTAINO, D, MOLIS, S, SPOONER, T, FERREIRA, P, BIERY, G, SAMPSON, R, MASUDA, H, SRIVASTAVA, R, ODA, Y, OGUMA, H

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Competitive and cost effective high-k based 28nm CMOS technology for low power applications von Arnaud, F., Thean, A., Eller, M., Lipinski, M., Teh, Y.W., Ostermayr, M., Kang, K., Kim, N.S., Ohuchi, K., Han, J.-P., Nair, D.R., Lian, J., Uchimura, S., Kohler, S., Miyaki, S., Ferreira, P., Park, J.-H., Hamaguchi, M., Miyashita, K., Augur, R., Zhang, Q., Strahrenberg, K., ElGhouli, S., Bonnouvrier, J., Matsuoka, F., Lindsay, R., Sudijono, J., Johnson, F.S., Ku, J.H., Sekine, M., Steegen, A., Sampson, R.

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A new four-level metal interconnect system tailored to an advanced 0.5-μm BiCMOS technology von WALL, R. N, OLEWINE, M. C, AUGUR, R, DIGREGORIO, J, COLOVOS, G

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Evaluation procedures for wafer bonding and thinning of interconnect test structures for 3D ICs von Lu, J.-Q., Jindal, A., Kwon, Y., McMahon, J.J., Rasco, M., Augur, R., Cale, T.S., Gutmann, R.J.

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Diffusion at the Al/Al oxide interface during electromigration in wide lines von Augur, R. A., Wolters, R. A. M., Schmidt, W., Dirks, A. G., Kordić, S.

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