Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding von Kopp, C, Augendre, E, Orobtchouk, R, Lemonnier, O, Fedeli, J M

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Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slab von Nakayama, Shigeru, Iwamoto, Satoshi, Ishida, Satomi, Bordel, Damian, Augendre, Emmanuel, Clavelier, Laurent, Arakawa, Yasuhiko

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Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs von Pouydebasque, A., Romanjek, K., Le Royer, C., Tabone, C., Previtali, B., Allain, F., Augendre, E., Hartmann, J.-M., Grampeix, H., Vinet, M.

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Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics von Bordel, Damien, Rajesh, Mohan, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Guimard, Denis, Arakawa, Yasuhiko

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Influence of Substrate Resistivity on Porous Silicon Small-Signal RF Properties von Godet, Geoffroy, Augendre, Emmanuel, Lugo-Alvarez, Jose, Jacquinot, Helene, Gaillard, Frederic X., Lorne, Thomas, Rolland, Emmanuel, Taris, Thierry, Servant, Florence

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Low-Temperature Measurements on Germanium-on-Insulator pMOSFETs: Evaluation of the Background Doping Level and Modeling of the Threshold Voltage Temperature Dependence von Van Den Daele, William, Augendre, Emmanuel, Romanjek, Krunoslav, Le Royer, Cyrille, Clavelier, Laurent, Damlencourt, Jean-Francois, Guiot, Eric, Ghyselen, Bruno, Cristoloveanu, S.

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Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3   μ m band von Bordel, Damien, Guimard, Denis, Rajesh, Mohan, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Arakawa, Yasuhiko

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MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices von Emboras, Alexandros, Najar, Adel, Nambiar, Siddharth, Grosse, Philippe, Augendre, Emmanuel, Leroux, Charles, de Salvo, Barbara, de Lamaestre, Roch Espiau

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Photonic-Electronic Integration With Bonding von Fedeli, Jean-Marc, Schrank, Franz, Augendre, Emmanuel, Bernabe, Stephane, Kraft, Jochen, Grosse, Philippe, Enot, Thierry

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Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laser von Kim, Sunghwan, Ahn, Sungmo, Lee, Jeongkug, Jeon, Heonsu, Regreny, Philippe, Seassal, Christian, Augendre, Emmanuel, Di Cioccio, Lea

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A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology von Morin, Pierre, Maitrejean, Sylvain, Allibert, Frederic, Augendre, Emmanuel, Liu, Qing, Loubet, Nicolas, Grenouillet, Laurent, Pofelski, Alexandre, Chen, Kangguo, Khakifirooz, Ali, Wacquez, Romain, Reboh, Shay, Bonnevialle, Aurore, le Royer, Cyrille, Morand, Yves, Kanyandekwe, Joel, Chanemougamme, Daniel, Mignot, Yann, Escarabajal, Yann, Lherron, Benoit, Chafik, Fadoua, Pilorget, Sonia, Caubet, Pierre, Vinet, Maud, Clement, Laurent, Desalvo, Barbara, Doris, Bruce, Kleemeier, Walter

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs von Severi, S., Pantisano, L., Augendre, E., San Andres, E., Eyben, P., De Meyer, K.

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Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics von Rajesh, Mohan, Bordel, Damien, Kawaguchi, Kenichi, Faure, Stephane, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Guimard, Denis, Arakawa, Yasuhiko

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(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI von Augendre, Emmanuel, Loubet, Nicolas, Morin, Pierre Francois, Liu, Qing, Schmitt, Joël, L'Herron, Benoît, Nguyen, Phuong, Barraud, Sylvain, Hutin, Louis, Maitrejean, Sylvain, De Salvo, Barbara, Coquand, Rémi, Reboh, Shay, Venigalla, Rajasekhar, Doris, Bruce, Yamashita, Tenko, Faynot, Olivier, Vinet, Maud

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METHOD FOR PRODUCING A MICROELECTRONIC DEVICE von AUGENDRE, Emmanuel, BARON, Thierry

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Wafer Level High-Speed Germanium Photodiode Array Integration von Kopp, Christophe, Ferron, Alexandre, Hartmann, Jean-Michel, Fournier, Maryse, Augendre, Emmanuel, Grosse, Philippe, Fedeli, Jean-Marc, Derks, Henk

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Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques von Morin, Pierre Francois, Grenouillet, Laurent, Loubet, Nicolas, Pofelski, Alexandre, Lu, Darsen, Liu, Qing, Augendre, Emmanuel, Maitrejean, Sylvain, Fiori, Vincent, de Salvo, Barbara, Doris, Bruce, Kleemeier, Walter

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A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration von Maitrejean, Sylvain, Loubet, Nicolas, Augendre, Emmanuel, Morin, Pierre Francois, Reboh, Shay, Bernier, Nicolas, Wacquez, Romain, Lherron, Benoit, Bonnevialle, Aurore, Liu, Qing, Hartmann, Jean-Michel, He, Hong, Halimaoui, Aomar, Li, Juntao, Pilorget, Sonia, Kanyandekwe, Joel, Grenouillet, Laurent, Chafik, Fadoua, Morand, Yves, Le Royer, Cyrille, Faynot, Oliver, Celik, Muhsin, Doris, Bruce, de Salvo, Barbara

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Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 [micro]m band for silicon photonics von Rajesh, Mohan, Bordel, Damien, Kawaguchi, Kenichi, Faure, Stephane, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Guimard, Denis, Arakawa, Yasuhiko

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Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands von Jain, Abhinav, Rojas-Sanchez, Juan-Carlos, Cubukcu, Murat, Peiro, Julian, Le Breton, Jean-Christophe, Vergnaud, Céline, Augendre, Emmanuel, Vila, Laurent, Attané, Jean-Philippe, Gambarelli, Serge, Jaffrès, Henri, George, Jean-Marie, Jamet, Matthieu

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