Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers von Ben Bakir, B., Descos, A., Olivier, N., Bordel, D., Grosse, P., Augendre, E., Fulbert, L., Fedeli, J. M.

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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers von Ben Bakir, B, Descos, A, Olivier, N, Bordel, D, Grosse, P, Augendre, E, Fulbert, L, Fedeli, J M

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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band von Jain, A, Rojas-Sanchez, J-C, Cubukcu, M, Peiro, J, Le Breton, J C, Prestat, E, Vergnaud, C, Louahadj, L, Portemont, C, Ducruet, C, Baltz, V, Barski, A, Bayle-Guillemaud, P, Vila, L, Attané, J-P, Augendre, E, Desfonds, G, Gambarelli, S, Jaffrès, H, George, J-M, Jamet, M

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"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS von Mercha, A., Rafi, J.M., Simoen, E., Augendre, E., Claeys, C.

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Electrical spin injection and detection at Al2O3/ n -type germanium interface using three terminal geometry von Jain, A., Louahadj, L., Peiro, J., Le Breton, J. C., Vergnaud, C., Barski, A., Beigné, C., Notin, L., Marty, A., Baltz, V., Auffret, S., Augendre, E., Jaffrès, H., George, J. M., Jamet, M.

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Efficient coupler between silicon photonic and metal-insulator-silicon-metal plasmonic waveguides von Emboras, A., Briggs, R. M., Najar, A., Nambiar, S., Delacour, C., Grosse, Ph, Augendre, E., Fedeli, J. M., de Salvo, B., Atwater, H. A., Espiau de Lamaestre, R.

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs von Severi, S., Pantisano, L., Augendre, E., San Andres, E., Eyben, P., De Meyer, K.

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Electrical and thermal spin accumulation in germanium von Jain, A., Vergnaud, C., Peiro, J., Le Breton, J. C., Prestat, E., Louahadj, L., Portemont, C., Ducruet, C., Baltz, V., Marty, A., Barski, A., Bayle-Guillemaud, P., Vila, L., Attané, J.-P., Augendre, E., Jaffrès, H., George, J.-M., Jamet, M.

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Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction von Van Den Daele, W., Augendre, E., Le Royer, C., Damlencourt, J.-F., Grandchamp, B., Cristoloveanu, S.

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Groups III and V impurity solubilities in silicon due to laser, flash,and solid-phase-epitaxial-regrowth anneals von Duffy, R., Dao, T., Tamminga, Y., van der Tak, K., Roozeboom, F., Augendre, E.

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Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs von Van Den Daele, W., Le Royer, C., Augendre, E., Mitard, J., Ghibaudo, G., Cristoloveanu, S.

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Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs von Pouydebasque, A., Romanjek, K., Le Royer, C., Tabone, C., Previtali, B., Allain, F., Augendre, E., Hartmann, J.-M., Grampeix, H., Vinet, M.

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Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates von Hartmann, J M, Sanchez, L, Van Den Daele, W, Abbadie, A, Baud, L, Truche, R, Augendre, E, Clavelier, L, Cherkashin, N, Hytch, M, Cristoloveanu, S

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Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates von Signamarcheix, T., Allibert, F., Letertre, F., Chevolleau, T., Sanchez, L., Augendre, E., Deguet, C., Moriceau, H., Clavelier, L., Rieutord, F.

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Improved GeOI substrates for pMOSFET off-state leakage control von Romanjek, K., Augendre, E., Van Den Daele, W., Grandchamp, B., Sanchez, L., Le Royer, C., Hartmann, J.-M., Ghyselen, B., Guiot, E., Bourdelle, K., Cristoloveanu, S., Boulanger, F., Clavelier, L.

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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate von Romanjek, K., Hutin, L., Le Royer, C., Pouydebasque, A., Jaud, M.-A., Tabone, C., Augendre, E., Sanchez, L., Hartmann, J.-M., Grampeix, H., Mazzocchi, V., Soliveres, S., Truche, R., Clavelier, L., Scheiblin, P., Garros, X., Reimbold, G., Vinet, M., Boulanger, F., Deleonibus, S.

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Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise von Valenza, M., Gyani, J., Martinez, F., Soliveres, S., Le Royer, C., Augendre, E., Clavelier, L.

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Investigation of 1/ f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion von Gyani, J., Valenza, M., Soliveres, S., Martinez, F., Le Royer, C., Augendre, E., Romanjek, K., Drazek, C.

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A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology von Valenza, M., El Husseini, J., Gyani, J., Martinez, F., Bawedin, M., Le Royer, C., Augendre, E., Damlencourt, J.F.

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Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding von Kopp, C, Augendre, E, Orobtchouk, R, Lemonnier, O, Fedeli, J M

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