Grain structure analysis and effect on electromigration reliability in nanoscale Cu interconnects von Cao, Linjun, Ganesh, K. J., Zhang, Lijuan, Aubel, Oliver, Hennesthal, Christian, Hauschildt, Meike, Ferreira, Paulo J., Ho, Paul S.

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In situ study on low- k interconnect time-dependent-dielectric-breakdown mechanisms von Boon Yeap, Kong, Gall, Martin, Liao, Zhongquan, Sander, Christoph, Muehle, Uwe, Justison, Patrick, Aubel, Oliver, Hauschildt, Meike, Beyer, Armand, Vogel, Norman, Zschech, Ehrenfried

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Stress migration model for Cu interconnect reliability analysis von Walter Yao, H., Yiang, Kok-Yong, Justison, Patrick, Rayasam, Mahidhar, Aubel, Oliver, Poppe, Jens

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Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy von Zschech, Ehrenfried, Huebner, Rene, Chumakov, Dmytro, Aubel, Oliver, Friedrich, Daniel, Guttmann, Peter, Heim, Stefan, Schneider, Gerd

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Advanced metallization concepts and impact on reliability von Hauschildt, Meike, Hintze, Bernd, Gall, Martin, Koschinsky, Frank, Preusse, Axel, Bolom, Tibor, Nopper, Markus, Beyer, Armand, Aubel, Oliver, Talut, Georg, Zschech, Ehrenfried

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Comparison of Process Options for Improving Backend-of-Line Reliability in 28 nm Node Technologies and Beyond von Aubel, Oliver, Hennesthal, Christian, Hauschildt, Meike, Poppe, Jens, Hahn, Jens, Boemmels, Juergen, Nopper, Markus, Seidel, Robert

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Comparison of Process Options for Improving Backend-of-Line Reliability in 28 nm Node Technologies and Beyond von Aubel, Oliver, Hennesthal, Christian, Hauschildt, Meike, Poppe, Jens, Hahn, Jens, Boemmels, Juergen, Nopper, Markus, Seidel, Robert

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A simple electrical method for etch bias and process reliability determination von Kok-Yong Yiang, Chin, M, Marathe, A, Aubel, O

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Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling von Ciptokusumo, Johar, Weide-Zaage, Kirsten, Aubel, Oliver

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A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node von Wan, Xinggong, Chandrashekhar, Sandhya, Bayha, Boris, Trentzsch, Martin, Balzer, Torben, Siddabathula, Mahesh, Aubel, Oliver

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A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node von XINGGONG WAN, CHANDRASHEKHAR, Sandhya, BAYHA, Boris, TRENTZSCH, Martin, BALZER, Torben, SIDDABATHULA, Mahesh, AUBEL, Oliver

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Grain structure effect on electromigration reliability of Cu interconnects with CoWP capping von Zhang, Lijuan, Ho, Paul S., Aubel, Oliver, Hennesthal, Christian, Zschech, Ehrenfried

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Simulation of migration effects in nanoscaled copper metallizations von Weide-Zaage, Kirsten, Kashanchi, Farzan, Aubel, Oliver

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In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures von Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Vogel, Norman, Hauschildt, Meike, Beyer, Armand, Engelmann, Hans-Jürgen, Zschech, Ehrenfried

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Determination of migration effects in Cu-via structures with respect to process-induced stress von Weide-Zaage, Kirsten, Zhao, Jiani, Ciptokusumo, Joharsyah, Aubel, Oliver

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices von Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Clausner, André, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Beyer, Armand, Hauschildt, Meike, Zschech, Ehrenfried

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A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities von Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Aubel, Oliver, Mühle, Uwe, Gluch, Jürgen, Niese, Sven, Standke, Yvonne, Rosenkranz, Rüdiger, Löffler, Markus, Vogel, Norman, Beyer, Armand, Engelmann, Hans-Jürgen, Guttmann, Peter, Schneider, Gerd, Zschech, Ehrenfried

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Robust Electromigration reliability through engineering optimization von Ng, Wee Loon, Tee, Kheng Chok, Liu, Junfeng, Ee, Yong Chiang, Aubel, Oliver, Tan, Chuan Seng, Pey, Kin Leong

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices von Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Clausner, André, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Beyer, Armand, Hauschildt, Meike, Zschech, Ehrenfried

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Practical considerations of process corner evaluation for deep-sub micron technology nodes using the example of its impact on electromigration von Aubel, O, Hoffmann, T

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