A silicon carbide nanowire field effect transistor for DNA detection von Fradetal, L, Bano, E, Attolini, G, Rossi, F, Stambouli, V

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Porphyrin conjugated SiC/SiOx nanowires for X-ray-excited photodynamic therapy von Rossi, F., Bedogni, E., Bigi, F., Rimoldi, T., Cristofolini, L., Pinelli, S., Alinovi, R., Negri, M., Dhanabalan, S. C., Attolini, G., Fabbri, F., Goldoni, M., Mutti, A., Benecchi, G., Ghetti, C., Iannotta, S., Salviati, G.

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Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys von Prutskij, T., Makarov, N., Attolini, G.

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Magnetic Li–M (M = Ni, Ni0.8Cu0.2, Cr) layered oxides nanoparticles for Li-ion batteries electrodes von Solzi, M, Cugini, F, Scaravonati, S, Galli, G, Pontiroli, D, Attolini, G, Besagni, T, Delgado, G E, Sagredo, V

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Design guidelines for thermo-photo-voltaic generator: The critical role of the emitter size von Attolini, G., Bosi, M., Ferrari, C., Melino, F.

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Synthesis mechanism of SiC-SiO2 core/shell nanowires grown by chemical vapor deposition von Finetti, F, Cavalli, E, Attolini, G, Rossi, F

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Tuning the radial structure of core–shell silicon carbide nanowires von Negri, M., Dhanabalan, S. C., Attolini, G., Lagonegro, P., Campanini, M., Bosi, M., Fabbri, F., Salviati, G.

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Optical method of estimation of degree of atomic ordering within quaternary semiconductor alloys von Prutskij, T., Attolini, G., Lantratov, V., Kalyuzhnyy, N.

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MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor von Attolini, G., Ponraj, J.S., Frigeri, C., Buffagni, E., Ferrari, C., Musayeva, N., Jabbarov, R., Bosi, M.

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Logic with memory: and gates made of organic and inorganic memristive devices von Baldi, G, Battistoni, S, Attolini, G, Bosi, M, Collini, C, Iannotta, S, Lorenzelli, L, Mosca, R, Ponraj, J S, Verucchi, R, Erokhin, V

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Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition von Bosi, M, Attolini, G, Negri, M, Ferrari, C, Buffagni, E, Frigeri, C, Calicchio, M, Pécz, B, Riesz, F, Cora, I, Osváth, Z, Jiang, L, Borionetti, G

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Synthesis and characterization of 3C–SiC nanowires von Attolini, G., Rossi, F., Bosi, M., Watts, B.E., Salviati, G.

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Nanoindentation studies of gallium arsenide heteroepitaxial layers von Ponraj, J. S., Attolini, G., Bosi, M., Dakshinamoorthy, A.

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AFM morphological characterization and Raman study of germanium grown on (111)GaAs von Attolini, G., Bosi, M., Calicchio, M., Martinez, O., Hortelano, V.

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Optical method of atomic ordering estimation von Prutskij, T, Attolini, G, Lantratov, V, Kalyuzhnyy, N

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Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE von Bosi, M., Attolini, G., Frigeri, P., Nasi, L., Rossi, F., Seravalli, L., Trevisi, G.

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High linear polarization of photoluminescence of GaInP epilayers at low temperature von Prutskij, T., Seredin, P., Attolini, G.

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Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction von Frigeri, C., Attolini, G., Bosi, M., Pelosi, C., Germini, F.

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Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications von Bosi, M., Attolini, G., Calicchio, M., Ferrari, C., Frigeri, C., Gombia, E., Motta, A., Rossi, F.

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Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation von Tatti, R, Timpel, M, Nardi, M V, Fabbri, F, Rossi, R, Pasquardini, L, Chiasera, A, Aversa, L, Koshmak, K, Giglia, A, Pasquali, L, Rimoldi, T, Cristofolini, L, Attolini, G, Varas, S, Iannotta, S, Verucchi, R, Salviati, G

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